Optical and Electrical TSV Integration via Single Lithography
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Solution Overview
Problem
Current processes for integrating optical and electrical through silicon vias (TSVs) on a single chip are complex and costly, requiring multiple mask sets and resulting in low yields.
Innovation Solution
A method and structure that simultaneously form annular-shape optical TSVs and via-shape electrical TSVs using a single lithography process, with an optical material lining the electrical TSVs and conductive material filling the remaining portions, and an airgap formed in alignment with the optical TSV, reducing the need for multiple masks and simplifying the fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple mask sets are used to form optical and electrical TSVs separately, then integration of optical and electrical circuits is achieved, but manufacturing complexity and cost increase significantly
Solution Approach 1:
The patent combines the formation of optical TSVs and electrical TSVs into a single lithography step using one mask set. The mask is designed with different pattern regions that define both annular optical via openings and filled electrical via openings simultaneously, eliminating the need for separate mask sets and reducing manufacturing complexity while achieving full integration of optical and electrical circuits
2Adaptability or versatility
If multiple mask sets and complex processes are used to integrate optical and electrical TSVs, then functional integration is achieved, but manufacturing yield decreases
Solution Approach 1:
By merging the patterning of optical and electrical TSVs into a single lithography step, the patent reduces the number of process steps and alignment operations required. This single-step approach minimizes cumulative process variations and alignment errors, thereby improving manufacturing yield while maintaining full functional integration of optical and electrical circuits on the same chip
3Manufacturing precision
If multiple mask sets are used for TSV integration, then precise via formation is achieved, but manufacturing cost increases
Solution Approach 1:
The patent achieves precise via formation for both optical and electrical TSVs in a single lithography step using one mask set. The mask is designed with specific pattern regions that enable simultaneous definition of annular optical via openings and filled electrical via openings, maintaining manufacturing precision while eliminating the cost of additional mask sets and reducing overall manufacturing cost
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing complexity and costs while enabling efficient integration of optical and electrical connections on a single chip, improving yield and allowing for the formation of both types of TSVs in a mask-free process.
Implementation Method 1
filling the annular via with optical material while forming a liner on sidewalls of a electrical TSV via with the optical material, in a same deposition process
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to electrical and optical via connections on a same chip and methods of manufacture. The structure includes an optical through substrate via (TSV) comprising an optical material filling the TSV. The structure further includes an electrical TSV which includes a liner of the optical material and a conductive material filling remaining portions of the electrical TSV.