Carbon-Silicon Memory Resistivity Control
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Solution Overview
Problem
Current nonvolatile semiconductor memory devices face challenges in reducing power consumption and misoperation errors, particularly when using carbon-based resistance change materials, as they often lead to increased cell current and erroneous switching.
Innovation Solution
A nonvolatile semiconductor memory device incorporating a variable resistance layer with a compound of carbon and silicon as the main component, including hydrogen, which reversibly changes resistivity states in response to voltage or current, thereby reducing power consumption and misoperation probabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If carbon-based resistance change material is used to achieve high resistance ratio, then misoperation probability is reduced, but power consumption increases due to increased cell current
Solution Approach 1:
The patent changes the material parameters by introducing a composite structure with carbon nanotubes embedded in a silicon oxide matrix, modifying the electrical resistivity characteristics to achieve both high resistance ratio and controlled current flow
Solution Approach 2:
The patent uses a composite material consisting of carbon nanotubes dispersed in a silicon oxide matrix, combining the high resistance ratio property of carbon with the electrical insulation and structural stability of silicon oxide to simultaneously reduce misoperations and control power consumption
2Use of energy by moving object
If electrical resistivity of low resistance state is increased to reduce power consumption, then cell current is reduced, but misoperation probability increases due to insufficient resistance differentiation
Solution Approach 1:
The patent optimizes the concentration of carbon nanotubes and the density of silicon oxide matrix to achieve the precise electrical resistivity range that provides both low power consumption and sufficient resistance differentiation between states
Solution Approach 2:
The composite structure of carbon nanotubes in silicon oxide matrix enables tuning of electrical properties through material composition control, achieving the optimal balance between power consumption and resistance ratio for reliable operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves reduced power consumption and lower misoperation errors by maintaining a high resistance ratio and resistivity in the low resistance state, while also ensuring adequate adhesion strength and thermal stability, thus improving overall performance and reliability.
Implementation Method 1
the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity
Data Source
AI summary
A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.