Carrier Wafer Edge Etching to Eliminate Overhang Residue
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Solution Overview
Problem
During semiconductor device manufacturing, residual material from photoresists and other processing materials gets trapped in the overhang structure of the carrier wafer, leading to interference with subsequent processing operations and increased risk of device failure.
Innovation Solution
A method involving a trimming process on the non-bonding area of the device wafer, followed by thinning and a corona etching process, is employed to prevent or reduce the overhang structure, minimizing residual material and reducing the risk of interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the carrier wafer is used during processing operations on the backside of the substrate, then the semiconductor device can be supported and processed, but residual material from photoresists and other materials becomes trapped within an overhang in the carrier wafer
Solution Approach 1:
The method performs preliminary actions by applying photoresist removal treatment and conducting etching operations on the carrier wafer before the main processing operations on the substrate backside. This preliminary preparation prevents residual material from being trapped in the overhang structure during subsequent processing, thereby eliminating the harmful effect while maintaining device support functionality
Solution Approach 2:
The invention converts the potentially harmful overhang structure that traps residual material into a beneficial feature by performing targeted etching operations. The etching process modifies the overhang structure to create a configuration that actually facilitates the removal of residual material, transforming the original problem into a solution that enhances processing effectiveness
2Object-generated harmful factors
If photoresist removal treatment is performed on the carrier wafer, then residual material is minimized, but additional processing steps are required
Solution Approach 1:
The invention merges multiple processing operations into a unified approach. The photoresist removal treatment is combined with etching operations and carrier wafer preparation steps into an integrated process sequence. This consolidation achieves effective residual material removal while minimizing the total number of discrete processing steps by performing multiple functions in a coordinated manner
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the risk of device failure by minimizing residual material in the overhang structure, thereby enhancing production yield and ensuring smooth subsequent processing operations.
Implementation Method 1
performing an etching process on the non-bonding area of the carrier wafer
Data Source
AI summary
A method of manufacturing a semiconductor device includes reducing a thickness of a device wafer bonded to a carrier wafer, wherein the device wafer includes a device, a portion of the carrier wafer beyond the device, in a plan view, is called a non-bonding area, and a portion of the carrier wafer overlapping the device, in the plan view, is called a device area. The method further includes performing an etching process on the non-bonding area of the carrier wafer, wherein the etching process is performed completely outside the device area of the carrier wafer.