Catalyst Layer for Semiconductor Interconnect Formation
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Solution Overview
Problem
As semiconductor feature sizes shrink and device density increases, forming interconnection structures with smaller pitches becomes increasingly difficult due to challenges in fabrication processes, particularly in achieving reliable and conductive interconnects with improved electromigration resistance.
Innovation Solution
The use of a catalyst layer to facilitate the formation of conductive features within interconnection structures, where the catalyst layer is made of materials like copper, nickel, or graphene, reducing the growth temperature and enhancing conductivity and electromigration resistance, and is physically in contact with the conductive elements, which are deposited using processes like CVD or electroplating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional damascene processes are used to form interconnect structures, then the fabrication process is relatively simple, but the electromigration resistance and reliability are insufficient at smaller pitches
Solution Approach 1:
The interconnect structure is segmented into multiple functional layers: a catalyst layer (first material layer) and a conductive element (second material layer). This segmentation allows each layer to perform its specific function - the catalyst layer provides electromigration resistance and facilitates conductive material growth, while the conductive element provides low-resistance electrical pathways, collectively improving reliability without requiring complete process redesign
Solution Approach 2:
The catalyst layer is formed in advance before depositing the conductive material. This preliminary action prepares the surface with appropriate catalytic properties that facilitate controlled growth of the conductive material during subsequent deposition processes, ensuring reliable interconnect formation at smaller pitches
2Productivity
If feature sizes are shrunk to increase device density, then production efficiency increases and costs decrease, but the pitch between interconnect structures decreases making fabrication more difficult
Solution Approach 1:
The invention changes the material parameters by introducing a catalyst layer with specific catalytic properties. This material parameter change enables controlled conductive material growth at reduced temperatures and smaller feature sizes, allowing fabrication of high-density interconnect structures without proportionally increasing process difficulty
3Reliability
If high conductivity materials are deposited at high temperatures, then conductivity is improved, but the formation temperature is too high for small pitch features
Solution Approach 1:
The catalyst layer acts as an intermediary between the substrate and the conductive material. It mediates the deposition process by providing catalytic sites that enable conductive material growth at lower temperatures than would be required for direct deposition, thus achieving good conductivity without requiring excessively high formation temperatures that would damage small pitch features
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the quality and reliability of interconnection structures by reducing formation temperatures, enhancing conductivity, and improving electromigration resistance, addressing the challenges of forming reliable interconnects at smaller pitches.
Implementation Method 1
The use of a catalyst layer to facilitate the formation of conductive features within interconnection structures, where the catalyst layer is made of materials like copper, nickel, or graphene, reducing the growth temperature
Implementation Method 2
conductive elements, which are deposited using processes like CVD or electroplating
Implementation Method 3
conductive elements, which are deposited using processes like CVD or electroplating
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer. The method also includes forming a catalyst layer over a sidewall of the opening and forming a conductive element directly on the catalyst layer. The catalyst layer is capable of lowering a formation temperature of the conductive element. The method further includes removing a portion of the conductive element such that the conductive element is within a space surrounded by the catalyst layer.