Semiconductor/Solid-State Device Details TRIZ Cases

A low-capacity TVS package structure uses a solder wafer between the chip and glass passivation pallet.

Double side mold internal stacking modules eliminate dummy spacers to increase device packing density in semiconductor packages.

Opposing concave and convex housing portions prevent direct contact during stacking, protecting identification information from damage or staining.

Air gap spacer reduces parasitic capacitance and prevents open fails during manufacturing.

A bismaleimide compound with a flexible aliphatic cyclic structure enables fine pattern formation at low exposure amounts.

Deep trenches filled with low-temperature dielectric material isolate circuit regions, reducing chip count and cost while maintaining electrical integrity.

Segmented via structures with palladium-gold finishes reduce pad stress and material consumption.

Segmented bonding electrodes with stepped platforms penetrate adhesive layers to resolve the trade-off between mechanical yield and electrical contact area.

Offset external pads on superficial dielectric layers connect to internal circuits via vias, preventing cracks during assembly.

Segmented windings on a discrete magnetic core lower welding joint cracking risk and improve module reliability.

Wire studs establish vertical interconnects before encapsulant deposition, reducing delamination risks and manufacturing costs in fan-out wafer level packages.

Direct deposition of a manifold and internal turbulator onto an object surface eliminates sealing complexity while enhancing heat transfer efficiency.

A chip package uses a connecting layer to link pins on a semiconductor substrate, reducing signal transfer time between stacked chips.

Flexible substrate and copper sensor array reduce manufacturing cost while maintaining sensing performance.

Substrate routing places signal lines between power and ground conductors, reducing feedback current and improving data transfer rates.

Segmenting the electrode allows lateral position adjustment without increasing inductance or causing breakage from thermal expansion.

Voids in a semiconductor substrate filled with conductive materials improve heat dissipation efficiency while maintaining structural integrity.

Pre-filling substrate openings with conductive material levels surface differences before chip bonding, preventing voids and ensuring reliable NCP adhesion.

Applying the BSM layer at the package level instead of the wafer level enables flexible thermal interface material selection and improved heat dissipation.

Selective deposition creates self-aligned conductive pillars that prevent short circuits and simplify fabrication at smaller feature sizes.

Piezo-stack actuators bend a flexural structure to drive a wire bonder transducer, resolving insufficient die pad cleaning from fixed linear scrubbing.

A power module substrate uses a copper circuit layer bonded to an aluminum metal layer for efficient heat dissipation.

Alternating waterdrop and arc-shaped finger pads on a semiconductor substrate reduce pitch distance while maintaining distinct bonding zones.

A leadframe paddle features an indented planar surface intersecting an outwardly extending surface at a specific angle to support integrated circuit mounting.

Replacing oxide dielectrics with non-oxide materials prevents oxygen diffusion into superconductors at CMOS processing temperatures.

Subtractive techniques form self-aligned interconnects using conductive pillars, resolving gap fill and resistivity constraints at 10 nm nodes.

Incorporating neutron-absorbing materials into passivation layers mitigates boron fission-induced soft errors without redesigning the fabrication process.

Segmenting vias into stacked structures reduces via width to 70 micrometers, resolving device size limits.

Segmenting amplifier stages onto separate dies mounted on a shared substrate eliminates bond-wire coupling instability while enabling gain exceeding 30 dB.

A single damascene interconnect structure uses a self-forming Mn, Si, and O barrier layer to reduce electrical resistance in integrated circuits.

Electroplated feed interconnections on supply lines lower resistance to prevent voltage drop and signal delay in active matrix displays.

Parallel trunk segments reduce current density to mitigate electromigration risks while maintaining high device density.

Bonding the capping wafer before release etching protects temperature-sensitive aluminum layers from damage during high-temperature packaging steps.

Mesh and solid insulation protrusions penetrate circuit patterns to reduce effective coefficient of thermal expansion while maintaining signal integrity.

A bending insulating sheet increases creepage and clearance distances without expanding package size or hindering heat convection.

A semiconductor chip package design segments bonding pads between a lead frame and a package substrate to increase input/output connection density.

Different sized vertical plugs in the 3-D semiconductor device reduce source-drain electrical differences, improving reliability and operation speed.

A segmented support substrate stabilizes conductive pillars during solder reflow, reducing pitch and bridging risk while preventing collapse.

Diffusion solder bonds on metal bodies prevent remelting during heat treatments, ensuring reliable electronic component mounting.

A catalyst layer lowers formation temperature and enhances electromigration resistance in shrinking semiconductor pitches.

Direct bonding wires bypass substrate traces to reduce crosstalk and improve signal integrity in semiconductor packages.

A peanut-shaped opening with a conductive plug reduces photo bridge and leakage defects caused by mixed contact sizes.

A 3D semiconductor inductor directs magnetic flux parallel to the surface, reducing parasitic coupling between stacked metal layers.

A precharge control circuit manages voltage levels across word lines and bit lines to optimize data programming operations.

Through-silicon vias connect stacked semiconductor dies directly to substrate conductive patterns.

Atomic layer etching removes transition metal oxide layers via molecular oxidant reaction and volatile fragment removal.

Mechanical kinking and twisting of bond wires creates high aspect ratio microcontacts with small pitch, overcoming etching limitations.

A film element uses differentiated thermal correction amounts across outer lead bonding pad areas to ensure precise alignment during display device assembly.

Hydrogen plasma pulses deposit alternating Ta and Ru layers to improve adhesion between copper wiring and insulation films.