Deep Trench Isolation for Circuit Element Separation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Integrating components with large differences in operating potentials in electronic circuits poses challenges in electrical isolation, as separating them into separate chips increases chip count and cost, while integrating them on common semiconductor substrates requires costly and problematic substrate isolation.
Innovation Solution
Forming an isolation trench at least 40 microns deep into the substrate of an integrated circuit, filling it with dielectric material at a temperature no greater than 320°C to create an isolation structure that separates isolated regions from the substrate, allowing for lateral separation and reducing interconnect degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If components with large differences in operating potentials are separated into separate chips, then electrical isolation is achieved, but chip count and cost increase
Solution Approach 1:
The patent merges multiple chips containing components with different operating potentials into a single integrated circuit chip. Instead of using separate chips for isolation, the invention integrates all components on one substrate and achieves electrical isolation through a deep trench structure filled with dielectric material, thereby reducing chip count while maintaining proper electrical isolation between components operating at different potentials
2Device complexity
If components are integrated on common semiconductor substrates, then chip count is reduced, but substrate isolation becomes costly and problematic
Solution Approach 1:
The patent transitions from two-dimensional planar isolation methods to three-dimensional deep trench isolation. By etching trenches at least 40 microns deep into the substrate and filling them with dielectric material, the invention creates vertical isolation barriers that effectively separate regions with different operating potentials, providing a manufacturable solution that avoids the costs and problems of conventional substrate isolation techniques
3Reliability
If deep trench etching is performed to at least 40 microns depth, then electrical isolation is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the manufacturing process into distinct stages: forming the deep trench structure, filling it with dielectric material, and planarizing the surface. This segmentation of the complex deep trench etching process into manageable steps makes the manufacturing process more controllable and less complex, while still achieving the required 40-micron depth for effective electrical isolation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reduces costs by integrating isolated components on the same chip, maintaining component integrity, and providing a balance between thermal management and mechanical strength through substrate thinning, while ensuring electrical isolation without significant current leakage.
Implementation Method 1
Dielectric material is formed in the isolation trench while the substrate is at a temperature no greater than 320° C. to form an isolation structure
Data Source
AI summary
An integrated circuit is formed by forming an isolation trench through at least a portion of an interconnect region, at least 40 microns deep into a substrate of the integrated circuit, leaving at least 200 microns of substrate material under the isolation trench. Dielectric material is formed in the isolation trench at a substrate temperature no greater than 320° C. to form an isolation structure which separates an isolated region of the integrated circuit from at least a portion of the substrate. The isolated region contains an isolated component. The isolated region of the integrated circuit may be a region of the substrate, and/or a region of the interconnect region. The isolated region may be a first portion of the substrate which is laterally separated from a second portion of the substrate. The isolated region may be a portion of the interconnect region above the isolation structure.