Non-oxide Dielectrics for Superconductor Oxygen Diffusion
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Solution Overview
Problem
The mass production of superconducting devices is hindered by the sensitivity of superconducting materials to oxygen incorporation, which is exacerbated by CMOS processing temperatures, leading to oxygen diffusion from traditional oxide-based dielectrics, affecting the integrity of superconducting properties.
Innovation Solution
Employing a non-oxide based dielectric layer with a dielectric constant of less than 6, such as amorphous silicon carbide, to mitigate oxygen diffusion, combined with photoresist patterning and etching techniques to form superconducting contacts, allowing for the fabrication of superconducting devices that maintain their properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional oxide-based dielectric materials (such as SiO2) are used in CMOS processing for superconducting devices, then the dielectric provides adequate electrical insulation, but oxygen diffusion occurs into the superconductor at processing temperatures (e.g., 400°C), degrading superconducting properties
Solution Approach 1:
The patent removes oxygen-containing oxide materials from the dielectric layer and replaces them with non-oxide based dielectric materials. This extraction of the harmful oxygen component eliminates the source of oxygen diffusion while maintaining the essential dielectric function of electrical insulation between superconducting layers.
Solution Approach 2:
The patent employs non-oxide based dielectric materials that create an inert environment for the superconducting structures. These materials do not contain oxygen that could diffuse into the superconductor, effectively providing a protective atmosphere that preserves superconducting properties during CMOS processing at elevated temperatures.
2Reliability
If non-oxide based dielectric materials with dielectric constant less than 6 are used, then oxygen diffusion is prevented and superconducting properties are maintained, but the dielectric constant is reduced compared to traditional SiO2
Solution Approach 1:
The patent changes the material composition parameter from oxide-based to non-oxide based dielectrics, which inherently alters the dielectric constant. This parameter change is accepted as a trade-off to eliminate oxygen diffusion, and the patent specifies selecting non-oxide materials with dielectric constants less than 6 that still provide adequate electrical insulation for superconducting device operation.
3Manufacturing precision
If photoresist patterning and etching processes are used to form superconducting contacts, then precise contact alignment and formation are achieved, but additional processing steps and time are required
Solution Approach 1:
The patent applies photoresist material to the surface before etching the non-oxide dielectric layer to form contact holes. This preliminary patterning action defines the precise locations of superconducting contacts before the etching process, ensuring accurate alignment with underlying superconducting features while enabling subsequent rapid fabrication steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the consistent and rapid fabrication of superconducting devices by preventing oxygen-induced degradation of superconducting materials, facilitating the mass production of superconducting devices with improved performance and reliability.
Implementation Method 1
Recent data indicates oxygen diffusion into the superconductor is strongly dependent on temperature and typical CMOS processing temperatures (e.g., 400oC) can result in oxygen diffusion from dielectrics that contain oxygen
Implementation Method 2
irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer
Implementation Method 3
etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern
Implementation Method 4
filling the openings in the non-oxide based dielectric layer with a superconducting material to form a set of superconducting contacts
Data Source
Figure 1~2
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Figure 5~6
AI summary
A method of forming a superconductor device (50) is provided. The method includes depositing a non-oxide based dielectric layer (56) over a substrate (52), depositing a photoresist material layer (58) over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings (60) in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material (70) to form a set of superconducting contacts (72).