Magnetron Sputtering Cathode Target Rotation for Uniform Erosion
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Solution Overview
Problem
Conventional sputtering processes face issues with uneven target erosion and reduced deposition uniformity due to non-uniform magnetic field effects, leading to inefficient target utilization and reduced deposition rates, especially when dealing with large-area substrates.
Innovation Solution
A cathode assembly with a movable target and a two-dimensional magnetic field source, where the target is rotated or moved relative to the magnetic field to maintain a uniform erosion profile, combined with a drive mechanism to adjust the target's position and the magnetic field's orientation during sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a stationary target with a fixed magnet array is used, then the sputtering process is simple to operate, but the target erosion becomes non-uniform leading to reduced deposition quality
Solution Approach 1:
The patent applies the dynamics principle by making the target movable rather than stationary. The target is rotated or translated relative to the magnet array during sputtering, which dynamically changes the erosion pattern across the target surface. This movement ensures uniform material removal and consistent deposition quality on the substrate, resolving the contradiction between deposition uniformity and device complexity by introducing controlled motion to the target assembly.
2Productivity
If the magnet array is rotated to achieve uniform erosion, then target utilization improves, but the deposition pattern becomes non-uniform on the substrate
Solution Approach 1:
The patent applies the inversion principle by reversing which component moves. Instead of rotating the magnet array (conventional approach), the target itself is rotated or translated relative to a stationary magnet array. This inversion achieves uniform target erosion through the moving target surface while maintaining a stable magnetic field configuration that produces consistent deposition patterns on the substrate, thereby resolving the contradiction between target utilization and deposition uniformity.
3Productivity
If a large target area is used to cover large-area substrates, then productivity increases, but the magnetic field coverage becomes insufficient leading to non-uniform erosion
Solution Approach 1:
The patent applies the dynamics principle to resolve the contradiction between large target area and erosion uniformity. By implementing target rotation or translation, the entire large target surface is dynamically exposed to the magnetic field over time. This ensures that even regions of the target that are not simultaneously covered by the magnet array receive uniform erosion through periodic exposure, enabling large-area substrate coverage while maintaining consistent deposition quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances target utilization, improves deposition uniformity, and increases deposition rates by ensuring even erosion and plasma distribution, allowing for more efficient sputtering of materials onto large-area substrates.
Implementation Method 1
Magnetic fields have been used to enhance the sputtering process. The plasma discharge is intensified by magnets located behind the target to produce a closed loop magnetic field over the target surface.
Implementation Method 2
A sputtering process deposits a thin film of target material on a substrate by dislodging small particles or atoms from a target, which coat the substrate.
Implementation Method 3
A negative voltage is applied to produce a plasma discharge from the target surface. This may result in an uneven deposition pattern on the substrate and a reduced ability to deposit precision films.
Data Source
AI summary
A cathode assembly for a magnetron sputtering system includes a target comprising sputterable material having an at least partially exposed, substantially planar sputtering or erosion surface and a target support configured to support and move the target during sputtering. In certain exemplary embodiments the cathode assembly further comprises a magnetic field source, e.g., a magnet array behind the target. The target support is configured to move the sputtering surface of the target by rotating or spinning the target in the plane of the sputtering surface, moving the target linearly back-and-forth or otherwise. The target support is configured to move the target relative to the magnetic field source, which may be stationary during sputtering, e.g., relative to the cathode assembly and vacuum chamber in which the sputtering is performed. A sputtering system including such a cathode assembly also is provided. A method of sputtering is further provided, employing such a cathode assembly.


