Electric Discharge Tubes TRIZ Cases

A substrate processing method uses a plasma gas mixture to etch silicon-containing films.

Segmented electrode architecture generates uniform atmospheric plasma to clean glass without helium or surface roughening.

Sintered ceramic base material maintains high volume resistivity across operating temperatures to prevent dielectric breakdown and enable easy wafer removal.

Alternating potential prevents arcing from fouled electrodes, enabling double stable power application for continuous brightening.

A charged particle beam writing apparatus calculates irradiation coefficients from enlarged and reduced patterns to modulate beam dose across small regions.

A mark array on a stage allows beam irradiators to scan separate marks, reducing position correction time and improving production flexibility.

Segmented plasma sources generate mono-energetic ions to densify carbon layers, resolving the trade-off between deposition rate and material hardness.

Segmented electrodes with independent voltage control decouple deflection from focus, resolving tuning difficulties in ion implantation systems.

Recesses connect cooling plate and upper electrode through holes to reduce boundary pressure, preventing abnormal discharge.

Rotating the shower head prevents localized micro-loading effects by dynamically changing gas distribution patterns.

Dual-pathway cleaning removes contaminants without component damage, reducing process drift and recovery time.

A plasma processing method alternates adsorption and desorption steps using distinct pressure levels to form and remove a reaction layer on semiconductor wafers.

Dynamic height adjustment of the wafer periphery compensates for focus ring consumption, extending replacement cycles and reducing operational costs.

Plasma etching with high ionization energy noble gas reduces ion momentum to protect tungsten layers during silicon oxide removal.

A conductive pattern layer forms nanometer-scale slits through gas expansion and contraction.

An electrostatic chuck adjusts clamping power using measured imaginary impedance to maintain substrate flatness during plasma processing.

Segmented over etch steps adjust plasma sheath tilt angles to resolve uniformity deterioration at the wafer edge during high aspect ratio silicon etching.

Platinum tetrachloride coating on the Geiger-Muller tube cathode prevents halogen depletion by blocking direct reaction with chlorine or bromine.

Replacing oxygen-based passivation eliminates the bullseye effect, yielding uniform patches with higher structural integrity.

Final energy filter adjusts ion beam energy via independent electrode voltages to support multiple current categories.

A replaceable upper chamber section uses a monolithic metal cylinder with conical inner surfaces and thermal mass to stabilize temperature.

Pressure purge etch method removes fluorine byproducts from 3D structures, preventing pattern collapse during selective dry etching.

Integrated SEM and AFM system stabilizes free-standing nanostructures, eliminating manual handling errors during high-throughput characterization.

Apparatus electrode plates apply independent DC voltage to sputter inner wall contaminants using processing gas ions.

A dry etching apparatus uses a shadow mask to define exposure portions on touch screen panels without photoresist.

Gas cluster ion beams offset systematic non-uniformities in upper workpiece layers, ensuring consistent device characteristics.

A substrate support assembly directs gas flow through a variable perimeter gap to control distribution across the processing chamber.

Isotropic metal atomic layer etch system uses organic vapor ligands and pulsed thermal annealing for selective surface modification.

Length-variable tubular elements decouple inertia from media supply lines, preventing constraining forces on aerostatic bearing guiding properties.

A TEM sample holder uses a coaxial conductor to convey radio frequency energy while maintaining cryogenic temperatures.

A phase grating modulates electron beam wavefronts to generate Gaussian intensity profiles through spatially varying diffraction efficiency.

A plasma processing system recycles rare gases through separation and boosting units.

A multi-aperture plate and deflection systems switch beam modes to compensate sample charging.

Two-photon absorption lithography forms sub-200 nm recesses in photoresist to etch invisible, non-damaging marks on diamonds.

A thermally conductive membrane separates cooling fluid from a sputtering cathode holder.

A back side deposition apparatus deposits stress compensating films on substrates without contacting the active front side.

Hydrofluoroether process gas achieves high silicon oxide etching selectivity while eliminating hazardous oxygen and hydrogen usage.

Synchronize upper and lower RF power supplies via dynamic pulse matching to stabilize plasma generation.

Radial permanent magnets constrain the arc spot on a target front end surface for stable film deposition.

Segmented thermal zones in a substrate support assembly maintain substrates at cryogenic temperatures while preventing spontaneous etching.

Dual conductive films on a low thermal expansion substrate prevent electronic charging and thermal expansion errors, enabling accurate position correction.

Atmospheric pressure plasma cures perovskite precursors into thin films, resolving the trade-off between high device performance and manufacturing scalability.

Rotating the cathode target relative to a fixed magnet array resolves uneven erosion patterns and improves deposition uniformity on large-area substrates.

A processor determines aberration coefficients from aperture image displacement to automate electron microscope calibration.

A silicon target uses a conductive layer with lower work function to minimize charge-up during sputtering film formation.

A particle beam system uses semiconductor detectors with membranes of varying secondary electron transmittance to filter signals.

Partitioning rotation angles into sections with varying velocities resolves uneven film thickness caused by imbalanced plasma density profiles.

Insulated metal windows measure currents to monitor plasma parameters, resolving monitoring difficulties in inductively coupled systems.

Actuating pushbutton rests on tongue end lateral edge to shift it toward base plate, limiting deflection and preventing spring overextension.

Sealing apparatus fluidly isolates the processing volume from the non-processing volume in substrate support systems.