Substrate Support Assembly Non-Uniform Gas Flow Clearance
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Solution Overview
Problem
In plasma processing applications, non-uniform gas flow distribution across substrates leads to asymmetrical processing profiles, defects, and inefficiencies in deposition and cleaning processes due to uneven plasma generation and gas flow.
Innovation Solution
A substrate support assembly with a specifically designed outer perimeter geometry that preferentially directs gas flow between the substrate support assembly and the sidewalls of the processing chamber, creating a greater flow rate through corner gaps compared to center gaps, thereby controlling gas flow distribution and velocity across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a substrate support assembly with non-uniform outer perimeter geometry is used, then gas flow distribution uniformity is improved, but device complexity increases
Solution Approach 1:
The substrate support assembly employs an asymmetric outer perimeter geometry where the distance between the support assembly and chamber sidewall varies around the periphery. Specifically, the gap is smaller at corner regions and larger at mid-side regions, creating non-uniform gas flow distribution that compensates for natural flow patterns and achieves more uniform plasma and deposition across the substrate surface.
Solution Approach 2:
Different regions of the substrate support assembly perimeter are designed with different gap dimensions to address local flow requirements. The corner regions have reduced gap widths to limit excessive gas flow, while mid-side regions have larger gaps to enhance gas flow delivery, creating locally optimized gas distribution that results in overall uniform processing across the substrate.
2Productivity
If gas flow is increased to improve deposition rate, then productivity is improved, but gas flow uniformity deteriorates
Solution Approach 1:
The invention changes the geometric parameters of the substrate support assembly, specifically the peripheral gap dimensions. By reducing the gap width at corner regions and maintaining or increasing it at mid-side regions, the system modifies gas flow parameters locally to achieve uniform overall flow distribution that supports high deposition rates while maintaining uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances deposition uniformity, reduces defects, and improves cleaning efficiency by adjusting gas flow profiles to ensure consistent material deposition and chamber cleaning across large substrates.
Implementation Method 1
a substrate support assembly for use in a plasma processing chamber that provides controllable non-uniform gas flow between the substrate support assembly and sidewalls of the plasma processing chamber
Implementation Method 2
Plasma enhanced chemical vapor deposition (PECVD) is used to deposit thin films on a substrate
Implementation Method 3
PECVD is generally accomplished by introducing a precursor gas or gas mixture into a vacuum chamber containing a substrate
Data Source
AI summary
The embodiments described herein generally relate to a substrate support assembly for use in a plasma processing chamber to provide non-uniform gas flow flowing between the substrate support assembly and sidewalls of the plasma processing chamber. In one embodiment, a substrate support assembly includes a substrate support assembly including a substrate support body defining at least a first side of the substrate support body, and a corner region and a center region formed in the first side of the substrate support body, wherein the corner region has a corner width that is smaller than a center width of the center region, the widths defined between a center axis and the first side of the substrate support body.