Gas Cluster Ion Beam for Workpiece Surface Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional gas cluster ion beam processing methods do not effectively alleviate systematic non-uniformities in the upper layers of workpieces caused by process anomalies inherent to semiconductor fabrication tools, leading to inconsistent device or circuit characteristics.
Innovation Solution
A gas cluster ion beam (GCIB) processing system is used upstream from process tools to selectively remove or add material to the workpieces, utilizing a vacuum vessel with a source chamber, ionization/acceleration chamber, and processing chamber to generate and control cluster ions, which are then directed at the workpiece to offset non-uniformities through etching, cleaning, or deposition, with metrology tools ensuring precise dosing and scanning for uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional GCIB processing is used to etch, clean, or deposit material on workpieces, then surface modification is achieved, but systematic non-uniformities caused by process tool anomalies are not alleviated
Solution Approach 1:
The patent applies preliminary action by performing GCIB processing upstream from the process tool to pre-correct systematic non-uniformities before the workpiece undergoes subsequent processing. This anticipatory correction ensures that even though the process tool introduces non-uniformities, they are compensated for in advance, leading to more consistent final results.
Solution Approach 2:
The patent implements feedback by using metrology tools to measure the workpiece characteristics before and after GCIB processing, then using this information to adjust and optimize the GCIB processing parameters. This closed-loop approach enables continuous improvement of process consistency and reliable correction of systematic non-uniformities.
2Use of energy by moving object
If conventional ion beam processing is used, then substantial energy delivery is achieved, but deeper subsurface damage occurs
Solution Approach 1:
The patent applies parameter changes by using gas cluster ions instead of conventional atomic ions, fundamentally changing the physical state and size parameter of the beam particles. This transformation allows the beam to deliver substantial energy while limiting penetration depth, thereby achieving effective surface modification without causing deeper subsurface damage.
Solution Approach 2:
The patent utilizes phase transitions by employing gas-phase cluster ions that disintegrate upon impact with the workpiece surface. This phase transition from intact cluster to dispersed atoms occurs at the surface, concentrating energy delivery where needed while preventing deeper penetration and subsurface damage characteristic of conventional ion beams.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more repeatable and constant process, improving output parameters by correcting systematic non-uniformities in the upper layers of workpieces, leading to enhanced device or circuit characteristics and spatially homogeneous results.
Implementation Method 1
The gas clusters can be ionized by electron bombardment, which permits the gas clusters to be formed into directed beams of controllable energy.
Implementation Method 2
Clusters of atoms can be formed by the condensation of individual gas atoms (or molecules) during the adiabatic expansion of high-pressure gas from a nozzle into a vacuum.
Implementation Method 3
The ion clusters disintegrate on impact with the workpiece. Each individual molecule in a particular disintegrated ion cluster carries only a small fraction of the total cluster energy.
Implementation Method 4
Neutral clusters of various sizes are produced and held together by weak interatomic forces known as Van der Waals forces.
Data Source
AI summary
Embodiments of an apparatus and methods for offsetting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.