Cavity Electrode Structure for Precise MEMS Gyroscope Frequency Tuning

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Solution Overview

Problem

Existing microelectromechanical gyroscope designs face challenges in accurately adjusting oscillation frequencies due to non-ideal manufacturing processes, leading to deviations in primary and secondary oscillation frequencies, which affects sensitivity and precision, and current methods like parallel plate combs and metal electrodes are bulky, imprecise, and susceptible to external distortions.

Innovation Solution

The introduction of cavity electrodes within a supporting structure wafer, which are electrically connected and adjustable, allowing for precise frequency adjustment of mechanical oscillations in microelectromechanical devices by changing the electrical potential between the cavity electrodes and movable electrodes, thereby improving the quality factor of out-of-plane motion and reducing the risk of electrode contact or sticking.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If parallel plate combs or metal electrodes are used for frequency adjustment, then frequency adjustment capability is provided, but the device becomes bulky and imprecise

Engineering Contradiction:
Improvefrequency adjustment precisionVSAvoiddevice volume
Core Design Contradiction:
Manufacturing precisionVSVolume of moving object

Solution Approach 1:

The cavity electrode is nested within the supporting structure wafer, utilizing the existing wafer volume to house the electrode structure. This eliminates the need for external bulky electrodes while maintaining frequency adjustment capability through the cavity design that fits within the wafer's internal space.

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The invention transitions from planar electrode arrangements to a three-dimensional cavity structure within the wafer. By utilizing the vertical dimension and creating a cavity that extends into the wafer thickness, the design achieves precise frequency adjustment without increasing the device's planar footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If metal electrodes are placed on the cap wafer, then frequency adjustment is enabled, but the structure becomes susceptible to packaging distortions

Engineering Contradiction:
Improvefrequency adjustment capabilityVSAvoidsusceptibility to packaging distortions
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The cavity electrode is merged with the supporting structure wafer, forming an integrated structure where the electrode is part of the wafer itself rather than a separate component. This integration ensures that the electrode moves with the wafer during packaging, eliminating relative motion and susceptibility to packaging-induced distortions.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The cavity structure acts as an intermediary between the frequency adjustment function and the external environment. By providing a controlled internal cavity space, the design isolates the electrode from external packaging stresses while maintaining the ability to adjust frequency through electrical potential changes.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Adaptability or versatility

If frequency adjustment is implemented using conventional methods, then oscillation frequency can be modified, but the quality factor of out-of-plane motion decreases

Engineering Contradiction:
Improvefrequency adjustabilityVSAvoidquality factor
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The cavity electrode is positioned to create a localized electrostatic field that specifically affects the out-of-plane motion mode. By concentrating the frequency adjustment influence on the desired motion mode while minimizing interference with other modes, the design maintains high quality factor for out-of-plane motion while achieving frequency adjustability.

Inventive Principle:
Principle #3Local quality

4Device complexity

If functional elements are placed close to the supporting structure wafer, then device integration is improved, but the risk of electrode contact or sticking increases

Engineering Contradiction:
Improveintegration levelVSAvoidrisk of electrode contact
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The cavity structure is pre-formed in the supporting structure wafer before final assembly, establishing a fixed geometric relationship between the cavity electrode and the functional layer. This preliminary structuring ensures adequate clearance is maintained throughout operation, preventing contact or sticking while achieving high integration.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution provides a stable and precise frequency adjustment mechanism that is less susceptible to packaging distortions, enhances the quality factor of out-of-plane motion, and allows for flexible placement of functional elements without electrical contact, improving the overall performance and reliability of microelectromechanical sensors like gyroscopes.

Implementation Method 1

The cavity electrode and the movable electrode form together a parallel plate capacitor. The electrostatic force between the capacitor electrodes is primarily in the direction of the mode of oscillation that is to be adjusted.

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Data Source

PatentUS10284142B2Electrode for a microelectromechanical device
Publication Date: 2019.05.07 MURATA MFG CO LTD
  • US10284142B2 patent drawing
  • US10284142B2 patent drawing
  • US10284142B2 patent drawing

AI summary

A microelectromechanical device structure comprises a supporting structure wafer. A cavity electrode is formed within a cavity in the supporting structure wafer. The cavity electrode forms a protruding structure from a base of the cavity towards the functional layer, and the cavity electrode is connected to a defined electrical potential. The cavity electrode comprises a silicon column within the cavity in the supporting structure wafer, which is partially or entirely surrounded by a cavity. One or more cavity electrodes may be utilized for adjusting a frequency of an oscillation occurring within the functional layer.