CCP Electrode Cleaning Ring for Lower Chamber Residue Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor processing chambers face challenges in maintaining cleanliness due to erosion from plasma processing and by-product deposition, leading to reduced lifespan and frequent maintenance, especially in hard-to-reach areas.
Innovation Solution
A substrate processing chamber with an electrode cleaning ring and RF power feed-through, utilizing RF power to generate a plasma that effectively removes deposition residues from the lower portion of the chamber volume, improving cleaning efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If periodic cleaning process is performed with highly reactive fluorine, then by-products are removed from chamber components, but chamber component lifespan is reduced and service frequency increases
Solution Approach 1:
The patent applies local quality by using different cleaning approaches for different chamber regions. The electrode cleaning ring specifically targets the lower chamber region with capacitively coupled plasma, while the upper chamber can use different cleaning methods, allowing optimized cleaning effectiveness for each area while reducing overall component exposure to aggressive cleaning conditions.
Solution Approach 2:
The patent changes the cleaning parameters by using capacitively coupled plasma with specific RF power settings (e.g., 13.56 MHz frequency) and controlled gas flow rates. This allows precise control of the cleaning process intensity, removing deposits effectively while minimizing damage to chamber components compared to uncontrolled highly reactive fluorine exposure.
2Object-generated harmful factors
If highly reactive fluorine is used for cleaning, then deposition residues are removed, but erosion of chamber components occurs
Solution Approach 1:
The patent converts the harmful erosive effect of reactive species into a beneficial cleaning action. By using capacitively coupled plasma with controlled reactive species generation, the cleaning process targets and removes deposition residues while the controlled plasma conditions minimize uncontrolled erosion of chamber components.
Solution Approach 2:
The patent changes the cleaning parameters by using capacitively coupled plasma with specific RF power settings (e.g., 13.56 MHz frequency) and controlled gas flow rates. This allows precise control of the cleaning process intensity, removing deposits effectively while minimizing damage to chamber components compared to uncontrolled highly reactive fluorine exposure.
3Ease of operation
If conventional cleaning methods are used, then upper chamber areas are cleaned, but difficult to reach locations accumulate by-products
Solution Approach 1:
The patent addresses the cleaning completeness issue by adding a spatial dimension to the cleaning process. The electrode cleaning ring is positioned in the lower chamber region and generates plasma that effectively cleans hard-to-reach areas that conventional upper-chamber cleaning methods cannot access, ensuring comprehensive cleaning throughout the entire chamber volume.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution extends the lifespan of chamber components, reduces maintenance frequency, and ensures thorough cleaning of difficult-to-reach areas, enhancing the overall cleanliness and reliability of the processing chamber.
Implementation Method 1
providing a second RF power having a second frequency of about 10 MHz to about 20 MHz to an electrode cleaning ring... removing at least a portion of a deposition residue disposed in a lower portion of the chamber volume
Data Source
AI summary
Embodiments of the present disclosure generally relate to a substrate processing chamber, and methods for cleaning the substrate processing chamber are provided herein. An electrode cleaning ring is disposed in a lower portion of a process volume (e.g., disposed below a substrate support in the process volume). The electrode cleaning ring is a capacitively coupled plasma source. The electrode cleaning ring propagates plasma into the lower portion of the process volume. RF power is provided to the electrode cleaning ring via an RF power feed-through. The RF plasma propagated by the electrode cleaning ring removes deposition residue in the lower portion of the process volume.