Electric Discharge Tubes TRIZ Cases

Electrostatic holding and tapered alignment surfaces position inner and outer edge rings accurately, reducing plasma wear and maintenance frequency.

Controlling HF and COF2 impurities in fluorobutene etching gas improves selective silicon etching while protecting masks in semiconductor fabrication.

Individually controlled phase elements dynamically shape charged particle beams for aberration correction, advanced imaging, and compact lithography.

Precharged inductors deliver fast kicker magnet pulses while limiting high-voltage exposure and improving radiation tolerance.

A chamber-matched repellent surface minimizes the sidewall gap to repel more thermal electrons and improve ion species generation.

Non-aligned groove ends and offset cooling gas holes spread gas more evenly around the chuck, improving wafer temperature control and patterning precision.

A tuned GeF4 and H2 mixture limits tungsten fluoride and cathode deposits, improving ion source life during germanium implantation.

After plasma dicing is interrupted, oxidizing-gas plasma cleans adhesive-derived organics from the wafer so etching can resume without contamination.

A broadband RF amplifier and fast impedance matching let one plasma chamber switch quickly between etch and deposition steps.

Periodic DC bias on the edge ring synchronizes with wafer potential to prevent tilted, elliptical edge holes and keep etching uniform.

Optical in-situ sensing measures etch rates and selectivity inside the chamber, cutting external metrology time and improving process consistency.

Reducing Si to 1 wtppm or less helps thick cobalt sputtering targets suppress silicide formation and maintain barrier adhesion and deposition speed.

A shielded dual-coil antenna suppresses gas-line discharge while maintaining uniform plasma density control across the substrate.

Independently controlled targets adjust distance to curved sections, delivering uniform film thickness without masks that slow sputtering.

Reversed e-beam current drives DIET cleaning on the extractor electrode, cutting outgassing and contamination in cold-field electron guns.

A dielectric layer balances chuck and focus ring capacitance to stabilize sheath height and suppress contact hole tilting during bias changes.

A recessed alumina insulator limits residual heat from the heated puck, protecting power distribution components during emergency machine off.

An RF-powered cleaning ring generates plasma in the lower chamber to remove hard-to-reach deposition residue while reducing erosion and maintenance.

A mixed etch-and-deposition gas removes embedded film while capping recesses, cutting air-gap processing steps and improving thickness control.

Pulsed RF remote plasma controls TiCl4-H2-Ar chemistry to limit byproduct particles and keep selective titanium deposition clean.

Pulsed electromagnets independently shape edge plasma conditions to reduce bowed etch profiles and improve substrate-wide uniformity.

Alternating fluorocarbon and hydrofluorocarbon plasmas improve oxide-nitride etch selectivity, recess depth control, and sidewall shape.

Mounted thermometers on rotating carrier arms measure susceptor surface temperature in process, cutting downtime and keeping offset data current.

Multiple beam-current measurements are checked against a correlation model to catch errors before beam adjustment compromises implantation accuracy.

Time-offset pulse control lets one plasma generator feed multiple process chambers at 40 kHz or higher, improving power use and cutting generator count.

Adjusting electrostatic chuck voltage as the upper electrode wears preserves thermal contact, heat removal, and stable plasma processing.

Combining beamlet sensing and position-mark alignment on one chuck cuts measurement time while preserving precise substrate-to-beam correlation.

Embedded tantalum markers reduce line edge roughness and resist wet etching, improving multilevel e-beam alignment accuracy.

Nitrogen and argon in a 3He-filled detector shorten reaction-product ranges, preserving position resolution while extending detector life.

A combined ferrite and air-core filter circuit stabilizes multi-zone substrate heating while limiting facility size and process disturbance.

A floating-gate semiconductor fin layout detects e-beam light with high spatial resolution while supporting low-power sensing and reliable patterning.

Calculated wafer rotation after deposition cycles evens gas exposure and cuts center-to-edge film thickness variation without continuous rotation.

A vacuum interrupter in the RF feed line isolates the generator from the plasma chamber during faults to prevent hardware damage.

Multiple ion-beam exposures at different twist angles match residual curvature maps to reduce wafer OPD and IPD with finer stress control.

Combining plasma surface reforming and microwave heating in one chamber removes substrate transfer steps and speeds atomic layer etching.

A loop-supported liquid droplet transfers graphene with less stress and contamination, improving liquid cell yield for TEM imaging.

Sector shunting in a permanent magnetic charged-particle lens enables fine field tuning, lower stray fields, and slimmer multi-column optics.

Grouped learning models and test-wafer updates help tune etching settings across tool and film differences while preserving prediction accuracy.

An insertion unit extends from a door to seal a liner opening, resolving gaps that cause external contamination in substrate treatment chambers.

A connector unit featuring a control plug terminal that extends to operate a relay before high voltage power transmission.

Fan-shaped magnetic field suppresses electron circulation, eliminating grid wear and energy loss to boost propulsion efficiency.

Gas cluster ion beam extraction removes charged particles to prevent surface damage and rough interfaces during semiconductor processing.

A hybrid electron beam and RF plasma system controls radical composition by combining radiant energy with an electron beam field.

Thermal cycling weakens particle bonds in ceramic coatings, reducing substrate contamination and seasoning time.

Inductor and capacitor in series with chuck ground create self-bias DC voltage to control thin film properties without complex active control systems.

Dynamic reactance control tracks time-varying load impedance during high frequency power modulation, reducing reflection waves and extending component lifespan.

Segmented electrode design treats glass molding surfaces while shielding plastic sleeves from contamination and degradation.

A multi-axis magnetic immersion objective lens uses radial gaps between pole plates to shape the magnetic field for charged particle beam focusing.

Porous ceramic substrate elongates electron conduction paths to suppress arc discharge in electrostatic chucks.

A variable capacitor current distributor adjusts antenna phase and resonance to manage plasma generation.

A surface treatment apparatus treats both workpiece faces simultaneously using an air gap and activated gas flow.

Shadowing structures interrupt ion beams to define implanted areas, resolving low-energy sensitivity limits without transistor fabrication.

Electrostatic deflection removes charged particles from the gas cluster ion beam, preventing surface damage and drug coating weight loss during processing.

A thin film deposition apparatus uses independent plasma generation and sputtering units to control bias voltage.

Optical emission spectrometry replaces Faraday devices to measure ion beam parameters, eliminating precision loss from insulating chamber components.

An arc-shaped concave blade rotates to chamfer sputtering target corners, preventing scratches while approximating the aimed R face.

Forming a protective film on the carbon-containing mask prevents shape abnormalities and maintains selection ratio during plasma etching.

Dielectric barrier prevents arcing during ignition, ensuring reliable plasma generation without sputtering.

Segmented secondary coils reduce RF power loss in matching units while enabling precise diametrical plasma density control.

External magnetic anodes strengthen the field to 1000 G, resolving weak confinement that lowers particle energy and film quality.

Plasma etching dissolves polymer deposits from semiconductor processing chamber surfaces, preventing particle contamination that compromises device yield.

Step-by-step electrostatic chuck cooling minimizes thermal expansion differences to prevent wafer particle generation in plasma processing chambers.

Cantilevered locking arms engage power cord receptacles to secure electrical connections between consumer objects and varying barrel plugs.

A conductive plate adjusts magnetic field distribution to ensure uniform plasma treatment across the specimen.

An automated algorithm engine analyzes sensor data streams to generate optimal endpoint detection algorithms.

Buoyancy from an ionic liquid adjusts the focus ring position, eliminating electric motors and reducing dust generation during plasma etching.

A lid member with a through-hole enables electron beam passage for liquid specimen observation.

Arithmetic processing unit generates sample images from detection signals and searches for patterns using templates.

Chemical conversion modifies graphite liner surfaces to enhance film retention and erosion resistance in ion implantation systems.

A rotatable heated electrostatic chuck enables off-axis substrate processing through magnetic rotation and distributed lamp heating.

Reference markings enable a second beam to correct mechanical drifts during substrate structuring, maintaining precision.

A configurable bias supply uses a bidirectional switch to control current direction through a plasma processing system.

Time-dependent substrate temperature controls plasma constituent sticking coefficients to deposit protective polymer layers on photoresist masks.

A lithography method modulates radiation dose based on process energy latitude to correct proximity effects in dense network geometries.

Heated gas breaks down ozone via pyrolysis, preventing plasma deactivation without obstructing flow.

Dual-shaft ceramic pedestal manages heat loss via fluid channels to maintain temperature uniformity under high RF power.

Segmented plasma processors convert raw material gas into radicals, maintaining film purity across large organic light emitting display substrates.

Vacuum chamber carburization reduces energy consumption while maintaining productivity.

Conductive deposition preventing members with non-overlapping screws secure the upper electrode in plasma atomic layer deposition systems.