Wafer Rotation Angle Control for Uniform Semiconductor Film Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving uniform film formation on substrates due to non-uniform gas distribution and interference from substrate support columns, leading to thickness differences between the center and peripheral regions of the substrate.
Innovation Solution
A method involving a substrate processing apparatus that performs a cycle of supplying a source gas, discharging it, followed by a reactive gas, while keeping the substrate stationary, and rotating it by a calculated angle after each cycle to ensure uniform gas distribution and film formation, thereby minimizing thickness differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is kept stationary during film formation, then the film formation speed is improved, but the film uniformity deteriorates due to non-uniform gas distribution
Solution Approach 1:
The substrate is rotated at specific intervals (e.g., after every 2-4 cycles) rather than continuously or never, creating a periodic action that balances film formation speed with uniformity. This periodic rotation redistributes the film thickness across the substrate surface while maintaining overall high deposition rates.
Solution Approach 2:
The substrate rotation is implemented as a dynamic control mechanism where the rotation state (rotated vs. stationary) changes based on the processing cycle number. This dynamic approach allows the system to optimize between speed and uniformity at different stages of the film formation process.
2Manufacturing precision
If the substrate is rotated continuously, then the film uniformity is improved, but the film formation speed deteriorates
Solution Approach 1:
Instead of continuous rotation, the substrate undergoes periodic rotation at specific cycles. This reduces the total rotation time while still achieving sufficient uniformity, thereby maintaining higher film formation speeds compared to continuous rotation methods.
Solution Approach 2:
The substrate is rotated only partially (at specific intervals rather than continuously), which is sufficient to achieve the required uniformity without the full time penalty of continuous rotation. This partial action approach optimizes the balance between uniformity and formation speed.
3Productivity
If the substrate is not rotated, then the film formation efficiency is improved, but the thickness difference between center and periphery increases
Solution Approach 1:
The substrate is subjected to periodic rotation during the film formation process. This periodic action redistributes the deposited material and process gases, reducing the thickness difference between center and periphery while maintaining high overall formation efficiency by not requiring continuous rotation.
4Manufacturing precision
If the substrate is rotated at every cycle, then the gas distribution uniformity is improved, but the processing time increases
Solution Approach 1:
The substrate rotation is performed periodically at selected cycles (e.g., every 2-4 cycles) rather than at every cycle. This periodic approach maintains sufficient gas distribution uniformity while significantly reducing the total processing time compared to rotating at every single cycle.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of films with good uniformity across the substrate by ensuring equal gas exposure and efficient discharge of by-products, reducing the 'LE effect' and improving film uniformity, especially on larger patterned wafers.
Implementation Method 1
ensuring equal gas exposure and efficient discharge of by-products
Implementation Method 2
supplying a source gas; discharging at least the source gas; supplying a reactive gas
Data Source
AI summary
Described herein is a technique capable of forming a film on a substrate with good uniformity. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: processing a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a source gas; (b) discharging at least the source gas; (c) supplying a reactive gas; and (d) discharging at least the reactive gas. The substrate is kept stationary while each cycle is performed, and a rotation angle of rotating the substrate is calculated based on the predetermined number of times after each cycle is completed.