In-Situ Optical Etch Selectivity Detection for Chamber Tuning

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Solution Overview

Problem

Conventional methods for measuring etch material selectivity in processing chambers are time-consuming and resource-intensive, requiring multiple external measurements to determine optimal etch process parameter settings, which hampers the efficiency and consistency of electronics device manufacturing.

Innovation Solution

A method involving a device with multiple sense and etch materials in a processing chamber, where optical detection components monitor the etch process to determine etch rates and selectivity without external measurements, allowing for real-time optimization of etch parameter settings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional external metrology measurements are performed before and after etch processes for multiple devices, then etch material selectivity can be determined, but the measurement process becomes time-consuming and resource-intensive

Engineering Contradiction:
Improveetch material selectivity measurementVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces external mechanical metrology measurement systems with an optical detection system that uses light to detect etch material selectivity in-situ during the etch process. The optical system detects changes in optical properties (such as reflectivity or absorption) of the etched materials, eliminating the need for time-consuming external physical measurements before and after the etch process.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces an optical intermediary (light) that mediates the detection of etch material selectivity. Instead of directly measuring physical dimensions with external metrology tools, the system uses optical signals to indirectly detect the etch progress and material selectivity, enabling real-time monitoring without removing devices from the processing chamber.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If multiple external measurements are performed to determine etch rates for different materials, then selectivity tuning can be achieved, but the overall system productivity decreases due to repeated measurement cycles

Engineering Contradiction:
Improveetch process selectivity controlVSAvoidsystem throughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent enables continuous monitoring of etch material selectivity throughout the etch process without interrupting the etching operation. The optical detection system continuously measures the etch progress and material selectivity in-situ, eliminating the need to stop the etch process for external measurements, thereby maintaining continuous productive operation while achieving precise selectivity control.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The patent performs preliminary optical characterization of the etch materials and processes to establish baseline data and detection parameters before production runs. This preliminary action enables the system to quickly adapt and tune selectivity during operation without requiring extensive measurement cycles, thus improving both precision and productivity.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If external metrology measurements are conducted for process monitoring and optimization, then etch parameter settings can be adjusted, but the latency of the electronics processing system increases

Engineering Contradiction:
Improveprocess quality controlVSAvoidsystem latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent implements a real-time feedback system where the optical detection system continuously monitors etch material selectivity and provides immediate feedback to the control system. This feedback loop enables dynamic adjustment of etch parameters during the process based on actual measurements, ensuring high process quality control without the time delay associated with external post-process measurements.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent replaces slow external mechanical measurement systems with a fast optical detection system that provides real-time data. The optical system's rapid response time enables immediate detection and reporting of etch process status, significantly reducing system latency while maintaining or improving process quality control through timely parameter adjustments.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables rapid and accurate determination of etch material selectivity and uniformity, reducing the time and resources needed for process optimization, thereby enhancing the quality and consistency of devices processed and increasing overall system yield.

Implementation Method 1

an optical detection component to detect an indication of completion of an etch process performed within the processing chamber

Methodology Applied
Scientific EffectOptical detection: Absorption Spectroscopy

Data Source

PatentUS11830779B2In-situ etch material selectivity detection system
Publication Date: 2023.11.28 APPLIED MATERIALS INC
  • US11830779B2 patent drawing
  • US11830779B2 patent drawing
  • US11830779B2 patent drawing

AI summary

An article, apparatus, and method for detecting an etch material selectivity is provided. A device including a first layer and a second layer is placed in a processing chamber. The first layer includes a first sense material deposited on a first portion of the device and a second sense material deposited on a second portion of the device. The second layer deposited on the first layer includes an etch material. During an etch process based on an initial set of etch parameter settings, a first amount of time to etch the second layer at the first portion of the device and a second amount of time to etch the second layer at the second portion of the device are measured. A first etch rate and a second etch rate of the processing chamber is determined based on the measured first amount of time, the measured second amount of time, and a thickness of the second layer. A first selectivity of the first etch material and a second selectivity of the second etch material is determined based on the first etch rate and the second etch rate. An optimized set of etch parameter settings for subsequent etch processes is determined based on the determined selectivities.