Microwave Plasma Etching Chamber for Single-Tool Substrate Heating
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Solution Overview
Problem
Current semiconductor manufacturing processes face productivity issues due to the need for separate devices for plasma treatment and heating in atomic layer etching, which prolongs processing time and reduces efficiency.
Innovation Solution
A substrate treating apparatus and method that integrates plasma treatment and heating in a single device, using a treatment container with a plasma providing unit and a microwave introducing unit, allowing for alternating operations of plasma surface reforming and microwave-assisted heating without moving the substrate, thereby reducing processing time and enhancing productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate devices are used for plasma treatment and heating in atomic layer etching, then each device can be optimized for its specific function, but the processing time increases and productivity decreases due to the need to move the substrate between devices
Solution Approach 1:
The patent combines the plasma treatment function and heating function into a single integrated apparatus. The plasma generation unit and microwave heating unit are incorporated into the same device, allowing both functions to be performed on the substrate without physical transfer between devices. This merging eliminates the time loss associated with moving substrates between separate plasma treatment and heating devices while maintaining the functional capabilities of both units.
Solution Approach 2:
The integrated apparatus performs multiple functions simultaneously - it can generate plasma for surface reforming and apply microwave heating for removing the reformed layer, all within a single device. This multi-functionality allows the apparatus to execute complete atomic layer etching cycles without requiring separate specialized devices, thereby improving throughput while maintaining functional optimization.
2Reliability
If the substrate is moved between plasma treatment device and heating device, then each process can be performed with dedicated equipment, but the productivity is lowered due to the time required for moving and repositioning the substrate
Solution Approach 1:
The patent merges the plasma treatment chamber and heating chamber into a single integrated system where the substrate remains in one location. The plasma generation unit and microwave heating unit share the same chamber space, eliminating the need to physically move the substrate between separate devices. This integration maintains process quality through dedicated functional units while eliminating time loss from substrate transfer operations.
3Reliability
If multiple devices are used for atomic layer etching, then each device can be specialized for its function, but the device complexity and space requirements increase
Solution Approach 1:
The patent combines multiple specialized functions into a single integrated apparatus. The plasma generation unit, microwave heating unit, and substrate chamber are merged into one system, reducing the total number of separate devices required. This integration maintains functional specialization through dedicated units while reducing overall system complexity and the space required for multiple separate devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integrated approach enables efficient atomic layer removal without the need for multiple devices, improving productivity and allowing for mass production by performing both plasma treatment and heating in a single apparatus.
Implementation Method 1
high-frequency power is applied to upper and lower electrodes installed at a predetermined interval in a sealed internal space in which the etching process is performed to form an electric field, and an electric field is applied to a reactive gas supplied into the sealed space to activate the reactive gas to form a plasma state
Implementation Method 2
a microwave introducing unit connected to the microwave generating unit and introducing microwaves into the treatment container
Data Source
AI summary
A substrate treating apparatus is provided to provide heating and plasma treatment of a substrate in a single device, and the substrate treating apparatus includes a treatment container in which a substrate is accommodated, a support member supporting the substrate in the treatment container, a plasma providing unit including an electrode generating plasma within the treatment container, and a microwave introducing unit connected to a microwave generating unit and introducing microwaves into the treatment container.