Ion Implanter Beam Current Validation for Accurate Dose Control
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Solution Overview
Problem
In semiconductor manufacturing, ion implantation processes face challenges in achieving accurate implantation due to potential measurement errors from highly accurate measurement devices, leading to incorrect beam adjustments and compromised implantation accuracy.
Innovation Solution
An ion implanter system that generates an ion beam based on an implantation recipe, utilizing multiple measurement devices to measure physical quantities and build a model representing the correlation between these measurements, allowing for the evaluation of measurement validity and correction of errors to ensure precise beam adjustment and dose control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If highly accurate measurement devices are used to measure beam current and beam angle, then measurement precision is improved, but measurement errors may occur leading to incorrect beam adjustments and compromised implantation accuracy
Solution Approach 1:
The system implements feedback by measuring physical quantities with multiple measurement devices, comparing the measurements against a pre-established model representing normal correlation patterns, and automatically correcting beam parameters when deviations are detected. This closed-loop feedback mechanism ensures that measurement errors do not propagate to the final implantation process, resolving the contradiction between high measurement precision and implantation reliability.
Solution Approach 2:
The patent introduces an intermediary model that represents the normal correlation between multiple measurement values. This model acts as a mediator between the measurement devices and the beam adjustment system, filtering out measurement errors by comparing actual measurements against the established correlation pattern before applying beam corrections, thus protecting implantation accuracy from measurement errors.
2Reliability
If multiple measurement devices are used to measure the ion beam, then measurement reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple measurement devices into a unified measurement system that evaluates correlations between measurement values from different devices. By combining the measurements and analyzing their interrelationships against a pre-established model, the system achieves enhanced measurement reliability while managing complexity through integrated processing rather than separate independent systems.
Solution Approach 2:
The measurement system performs self-validation by using the correlation model to automatically detect and flag measurement errors without external intervention. The system self-corrects by identifying inconsistent measurements and relying on valid measurements from other devices, enabling the system to maintain reliability while keeping the operational complexity manageable through automated self-diagnosis.
Data Source
AI summary
An ion implanter including a beam generation device that generates an ion beam, based on an implantation recipe, a plurality of measurement devices that measure beam currents of the ion beam, and a control device. The control device acquires a data set including the beam currents and an implantation parameter in the implantation recipe, and evaluates measurement validity of the beam currents of the ion beam by using the model. The implantation parameter may be one of ion species, beam energy, a beam current, a beam size, a wafer tilt angle, a wafer twist angle and an average dose. The model may be built based on a plurality of past data sets acquired during a plurality of implantation process based on the implantation recipe.