Semiconductor Fin Detector Layout for High-Resolution e-Beam Sensing
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Solution Overview
Problem
Current semiconductor patterning processes face challenges in maintaining reliability and yield as feature sizes decrease, with existing lithography methods and materials not being entirely satisfactory for achieving high-density and power-efficient semiconductor detectors for detecting e-beam lights.
Innovation Solution
The development of semiconductor detectors with a specific configuration including a substrate, active region, isolation structure, gate structure, source/drain structures, sensing contacts, and sensing pads, which allow for powerless sensing mode operation and efficient detection of e-beam lights, utilizing a floating gate and capacitance-based design for high-density and high-resolution detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is decreased to increase device density, then productivity and integration are improved, but manufacturing precision and reliability deteriorate
Solution Approach 1:
The patent replaces optical detection methods with electrical detection using semiconductor detectors. The detectors convert light signals from the electron beam into electrical signals, enabling more precise and reliable detection at smaller feature sizes where optical methods become insufficient.
Solution Approach 2:
The patent introduces semiconductor detectors as intermediary elements between the electron beam and the detection system. These detectors are positioned to receive light emitted by the electron beam and convert it into measurable electrical signals, providing an indirect but more reliable detection method for high-density patterning.
2Measurement precision
If optical proximity correction and lithography parameter adjustment are used to mitigate defects, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent extracts the detection function from the lithography system itself by using separate semiconductor detectors. This allows the lithography system to maintain its original design while adding detection capabilities through independent detector units that monitor the electron beam separately.
Solution Approach 2:
The semiconductor detectors serve multiple functions: they detect light from the electron beam, provide feedback for process control, and enable real-time monitoring of patterning quality. This multi-functionality reduces the need for separate specialized systems.
3Ease of manufacture
If conventional detection methods are used for e-beam light, then ease of manufacture is maintained, but power efficiency and detection precision worsen
Solution Approach 1:
The patent changes the detection parameter from optical measurement to electrical measurement. The semiconductor detectors operate in electrical mode, converting light signals into electrical signals that can be processed with lower power consumption compared to conventional optical detection systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables reliable and efficient detection of e-beam lights with high spatial resolution and power efficiency, improving patterning quality and reducing the need for additional recording elements, while being compatible with existing semiconductor manufacturing processes.
Implementation Method 1
detection using semiconductor detector... efficient detection of e-beam lights
Data Source
AI summary
A device includes a semiconductor fin, an isolation structure, a gate structure, source/drain structures, a sensing contact, a sensing pad structure, and a reading contact. The semiconductor fin includes a channel region and source/drain regions on opposite sides of the channel region. The isolation structure laterally surrounds the semiconductor fin. The gate structure is over the channel region of the semiconductor fin. The source/drain structures are respectively over the source/drain regions of the semiconductor fin. The sensing contact is directly on the isolation structure and adjacent to the gate structure. The sensing pad structure is connected to the sensing contact. The reading contact is directly on the isolation structure and adjacent to the gate structure.