Pulsed Remote Plasma Ti Deposition for Low-Particle Selectivity
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Solution Overview
Problem
Remote plasma selective CVD for TiSix deposition faces uncontrollable particle issues due to byproduct accumulation in the remote cavity, leading to dirty processing chamber conditions and reduced productivity.
Innovation Solution
The method involves forming a plasma reaction between titanium tetrachloride, hydrogen, and argon in a region between a lid heater and a showerhead, with RF power provided at a pulse frequency of 5 kHz to 100 kHz and a duty cycle of 10% to 20%, and flowing reaction products into the process chamber to selectively form a titanium material layer on a silicon substrate, minimizing byproduct production and maintaining a clean processing environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If remote plasma selective CVD is used for TiSix deposition, then deposition selectivity is improved, but particle contamination increases due to byproduct accumulation in the remote cavity
Solution Approach 1:
The patent applies periodic pulsed plasma activation instead of continuous plasma generation. The plasma is activated in pulses with specific duty cycles (10-90%) to allow periodic formation of reactive species that deposit TiSix selectively on silicon surfaces, while the off-periods allow byproducts to be cleared from the remote cavity, preventing particle accumulation and contamination
Solution Approach 2:
The patent changes key plasma process parameters including pulse width, duty cycle, and plasma power to control the chemistry in the remote cavity. By optimizing these parameters, the system achieves selective TiSix deposition while minimizing byproduct formation and particle generation that would otherwise contaminate the processing chamber
2Productivity
If continuous plasma is used for deposition, then deposition rate is improved, but byproduct accumulation in remote cavity increases
Solution Approach 1:
The system uses pulsed plasma activation where the plasma is turned on and off periodically. During the on-periods, deposition occurs at high rates; during off-periods, the plasma is extinguished allowing byproducts to clear from the remote cavity. This periodic operation maintains high overall deposition rates while preventing byproduct accumulation that would occur with continuous plasma
Solution Approach 2:
The patent introduces dynamic control of plasma activation through pulsed RF power application. The plasma state is dynamically switched between active and inactive states, allowing the system to optimize between deposition rate (when plasma is active) and byproduct clearance (when plasma is inactive), achieving both high productivity and clean operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the selectivity and productivity of TiSix deposition by controlling plasma behavior, reducing particle contamination, and maintaining a clean remote channel, thereby enhancing the efficiency of the deposition process.
Implementation Method 1
forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar)
Implementation Method 2
remote plasma chemical vapor deposition (CVD)
Implementation Method 3
providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20%
Data Source
AI summary
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises forming a plasma reaction between titanium tetrachloride (TlCl4), hydrogen (H2), and argon (Ar) in a region between a lid heater and a showerhead of a process chamber or the showerhead and a substrate while providing RF power at a pulse frequency of about 5 kHz to about 100 kHz and at a duty cycle of about 10% to about 20% and flowing reaction products into the process chamber to selectively form a titanium material layer upon a silicon surface of the substrate.