Substrate Recess Processing for Single-Step Air Gap Formation
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Solution Overview
Problem
Existing substrate processing methods for forming air gaps between wires in semiconductor devices require multiple cumbersome steps, including separate etching and film formation processes, which can lead to embedding issues and increased complexity.
Innovation Solution
A substrate processing method that simultaneously removes a first film from a recessed substrate while forming a second cap layer using a processing gas containing both film formation and etching gases, allowing for the efficient formation of air gaps with fewer steps and improved process control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate etching and film formation processes are used to form air gaps, then the air gap structure can be formed, but the processing steps increase and complexity increases
Solution Approach 1:
The patent combines separate etching and film formation processes into a single integrated process step. The processing gas contains both etching components (to remove the first film from the recess) and film formation components (to deposit the second film on the recess walls), allowing both operations to occur simultaneously and reducing the total number of processing steps.
Solution Approach 2:
The patent maintains continuous useful action by ensuring that while the first film is being etched away from the recess, the second film is continuously deposited on the recess walls. This continuous simultaneous action eliminates idle time between separate etching and deposition steps, improving process efficiency.
2Manufacturing precision
If separate etching and film formation processes are used, then each process can be optimized, but the overall processing time increases
Solution Approach 1:
The patent merges etching and film formation into a single simultaneous process, eliminating the sequential time required for separate operations. The processing gas delivers both etching and film formation agents that work concurrently, reducing total processing time while maintaining quality through proper gas composition and flow control.
Solution Approach 2:
The patent employs periodic or pulsed gas supply patterns where etching and film formation gases are introduced in a controlled periodic manner, allowing both processes to occur in an optimized sequence within a single processing cycle, thereby reducing overall processing time while maintaining film quality.
3Manufacturing precision
If multiple processing steps are used for air gap formation, then each step can be controlled independently, but process complexity and difficulty increase
Solution Approach 1:
The patent combines multiple processing steps into a single integrated process using a multi-component processing gas. While the gas composition and flow rates are controlled to achieve both etching and film formation, this is managed through a single process parameter set rather than multiple separate steps, simplifying operational procedures.
Solution Approach 2:
The patent controls the simultaneous etching and film formation processes by adjusting parameters of the processing gas (composition, flow rates, pressure, temperature) rather than controlling separate sequential steps. This parameter-based control simplifies the operation while maintaining precise control over the air gap formation process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the easy formation of air gaps with reduced processing steps, improved film formation superiority, and enhanced flexibility in adjusting etching and film thickness, facilitating subsequent wire formation and insulation properties.
Implementation Method 1
removing the first film by etching while forming a second film so as to cover the recess from which the first film was removed by supplying a processing gas to the substrate
Implementation Method 2
forming a second film so as to cover the recess from which the first film was removed by supplying a processing gas to the substrate, the processing gas including a gas contributing to film formation
Data Source
AI summary
A substrate processing method includes: preparing a substrate having a recess and a first film embedded in the recess; and removing the first film by etching while forming a second film so as to cover the recess from which the first film was removed by supplying a processing gas to the substrate, the processing gas including a gas contributing to film formation and a gas contributing to the etching.