Ceramic Capacitor Grain Boundary Composition for Thin-Layer Reliability
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Solution Overview
Problem
Multilayer ceramic capacitors face challenges in miniaturization and high capacitance while maintaining reliability, particularly in terms of insulation resistance and breakdown voltage, due to the thinning of dielectric layers, which also affects temperature stability as electronic devices become more powerful.
Innovation Solution
A ceramic electronic component with a dielectric layer composed of BaTiO3, Dy, and Si, where the Si content in grain boundaries is controlled to achieve a mass ratio of 5 or more with the Si content in grains, enhancing the energy level and reliability, and Mn is used to improve high-temperature withstand voltage characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the thickness of the dielectric layer is reduced to achieve miniaturization and high capacitance, then the capacitance and size requirements are met, but the reliability, insulation resistance, and breakdown voltage are lowered
Solution Approach 1:
The patent applies local quality by creating a non-uniform distribution of Si elements specifically at the grain boundaries of the dielectric layer, rather than uniform distribution throughout. This localized enrichment of Si at grain boundaries (achieving GB1/G1 ratio of 5 or more) enhances the energy level and reliability of the critical interface regions without requiring overall thickening of the dielectric layer, thus resolving the contradiction between thin dielectric thickness and high reliability.
Solution Approach 2:
The patent changes the chemical composition parameter by controlling the Si content ratio between grain boundaries and grains (GB1/G1 ≥ 5). This parameter change modifies the energy level of grain boundaries, which directly affects the breakdown voltage and reliability. By adjusting this compositional parameter, the patent enables thin dielectric layers to maintain high reliability and insulation resistance despite reduced thickness.
2Volume of moving object
If the thickness of the dielectric layer is reduced to achieve miniaturization, then the component size is reduced, but the insulation resistance and breakdown voltage are lowered
Solution Approach 1:
The patent applies local quality by creating a non-uniform distribution of Si elements specifically at the grain boundaries of the dielectric layer, rather than uniform distribution throughout. This localized enrichment of Si at grain boundaries (achieving GB1/G1 ratio of 5 or more) enhances the energy level and reliability of the critical interface regions without requiring overall thickening of the dielectric layer, thus resolving the contradiction between thin dielectric thickness and high reliability.
Solution Approach 2:
The patent changes the chemical composition parameter by controlling the Si content ratio between grain boundaries and grains (GB1/G1 ≥ 5). This parameter change modifies the energy level of grain boundaries, which directly affects the breakdown voltage and reliability. By adjusting this compositional parameter, the patent enables thin dielectric layers to maintain high reliability and insulation resistance despite reduced thickness.
3Quantity of substance
If the dielectric layer is thinned to increase the number of layers for high capacitance, then the capacitance increases, but the temperature stability deteriorates
Solution Approach 1:
The patent applies local quality by creating a non-uniform distribution of Si elements specifically at the grain boundaries of the dielectric layer, rather than uniform distribution throughout. This localized enrichment of Si at grain boundaries (achieving GB1/G1 ratio of 5 or more) enhances the energy level and reliability of the critical interface regions without requiring overall thickening of the dielectric layer, thus resolving the contradiction between thin dielectric thickness and high reliability.
Solution Approach 2:
The patent changes the chemical composition parameter by controlling the Si content ratio between grain boundaries and grains (GB1/G1 ≥ 5). This parameter change modifies the energy level of grain boundaries, which directly affects the breakdown voltage and reliability. By adjusting this compositional parameter, the patent enables thin dielectric layers to maintain high reliability and insulation resistance despite reduced thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability and high-temperature reliability of ceramic electronic components by increasing the energy level of grain boundaries and reducing charge density, allowing for thinner dielectric and internal electrode thicknesses without compromising performance, thus enabling miniaturization and high capacitance.
Implementation Method 1
GB1/G1 is 5 or more in mass ratio, where G1 is a content of Si of one of the plurality of grains and GB1 is a content of Si of the grain boundary
Data Source
AI summary
A ceramic electronic component includes a body including a dielectric layer and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes. The dielectric layer includes a plurality of grains and a grain boundary disposed between adjacent grains, and GB1/G1 is 5 or more in mass ratio, where G1 is a content of Si of one of the plurality of grains and GB1 is a content of Si of the grain boundary.