Multilayer Ceramic Capacitor Microstructure for Withstand Voltage
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Solution Overview
Problem
Multilayer ceramic electronic components face challenges in maintaining high temperature and high pressure characteristics, insulation resistance, and reliability due to the thinning of dielectric layers, which affects grain size and dispersion, leading to deteriorated withstand voltage and reliability.
Innovation Solution
A multilayer ceramic electronic component design featuring a dielectric layer with a main component of (Ba1-xCax)(Ti1-y(Zr, Sn, Hf)y)O3, including grains and grain boundaries with a secondary phase of Si at triple points, and controlled Si content dispersion at interfaces, to enhance microstructure uniformity and insulation resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the dielectric layer is thinned to achieve miniaturization and high capacitance, then the capacitance density increases, but the withstand voltage characteristics and reliability deteriorate
Solution Approach 1:
The patent applies local quality by introducing a secondary phase (silicon oxide or silicon nitride) specifically at the triple points of the dielectric layer, where three grain boundaries meet. This localized modification targets the most critical regions for electrical breakdown without requiring overall thickening of the dielectric layer, thus maintaining high capacitance density while improving withstand voltage characteristics at the most vulnerable locations.
Solution Approach 2:
The patent employs composite materials by combining the primary dielectric material (barium titanate-based) with secondary phases (silicon oxide or silicon nitride) at specific locations. This composite structure creates regions of enhanced electrical resistance at triple points, forming a multi-phase system that simultaneously achieves high capacitance and improved reliability.
2Volume of moving object
If the dielectric layer is thinned for ultra-miniaturization, then the component size decreases, but the high-temperature and high-pressure characteristics deteriorate
Solution Approach 1:
The secondary phase is strategically placed at triple points to provide localized structural stability and resistance to thermal and pressure stress. This localized reinforcement prevents crack propagation and maintains dielectric integrity under extreme conditions without requiring overall increase in dielectric thickness.
Solution Approach 2:
The secondary phase acts as a preventive measure against potential failure modes under high temperature and pressure. By pre-positioning these stable phases at critical triple points before stress application, the structure is prepared to withstand thermal and pressure shocks that would otherwise cause degradation in thinned dielectric layers.
3Quantity of substance
If the dielectric layer is thinned to increase capacitance, then the capacitance increases, but the insulation resistance characteristics deteriorate
Solution Approach 1:
The patent introduces high-resistance secondary phases specifically at triple points, which are natural weak points for insulation failure. This localized enhancement of insulation properties at critical locations prevents leakage current paths without affecting the overall capacitance, as the secondary phase occupies only a small fraction of the total dielectric volume.
Data Source
AI summary
A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer having a main component represented by (Ba1-xCax)(Ti1-y(Zr, Sn, Hf)y)O3 (where, 0≤x≤1, 0≤y≤0.5), and having a plurality of grains and grain boundaries disposed between the plurality of grains, and including first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween; a first external electrode; and a second external electrode, wherein the dielectric layer includes a triple point in contact with three grain boundaries and a secondary phase of Si disposed inside the triple point, wherein a dispersion of an Si content at an interface between the dielectric layer and the internal electrode may be 1% by weight or less.