Ceramic Heater Terminal Rounded Surface Stress Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Ceramic heaters in semiconductor processing systems are prone to cracking due to high temperatures and rapid thermal slew rates, limiting the deposition temperature and throughput, and requiring time-consuming material qualification and testing to prevent adverse effects on material layers.

Innovation Solution

A substrate support with a heater body made from ceramic material, featuring a heater element and terminal with a rounded surface embedded within the ceramic material to reduce stress, and connected to an electrode surface for efficient heat transfer, using materials like molybdenum or molybdenum alloys to match thermal expansion coefficients and prevent cracking.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the deposition temperature is increased to improve throughput, then productivity is improved, but the ceramic heater material is subject to cracking

Engineering Contradiction:
ImprovethroughputVSAvoidcracking resistance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the material parameter of the heater body from conventional ceramic materials to alumina ceramic material, which has superior crack resistance at high temperatures. This material parameter change enables the system to operate at higher deposition temperatures without experiencing heater cracking, thereby improving throughput while maintaining reliability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure consisting of an alumina ceramic heater body combined with a heating element. This composite material approach leverages the high-temperature stability and crack resistance of alumina ceramic while incorporating the heating functionality, enabling reliable operation at elevated deposition temperatures that improve productivity.

Inventive Principle:
Principle #40Composite materials

2Productivity

If the heating rate is increased to improve throughput, then productivity is improved, but the ceramic heater material is subject to cracking

Engineering Contradiction:
ImprovethroughputVSAvoidcracking resistance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the material parameter of the heater body to alumina ceramic material, which has superior thermal shock resistance and crack resistance under rapid heating conditions. This enables the system to withstand higher heating rates without heater failure, thereby improving throughput while maintaining reliability during rapid thermal slew operations.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the ceramic material composition is changed to improve cracking resistance, then reliability is improved, but time-consuming qualification and testing is required

Engineering Contradiction:
Improvecracking resistanceVSAvoidqualification and testing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent specifies alumina ceramic material with particular properties (high crack resistance, appropriate thermal expansion coefficient) as the heater body material. By defining specific material parameters upfront, the invention reduces the need for extensive qualification and testing of alternative materials, as alumina ceramic is a well-established material with known performance characteristics that meet the requirements for high-temperature, high-reliability operation.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively limits stress in the ceramic material, reducing the likelihood of cracking and prolonging the service life of the substrate support, allowing for higher temperature and faster material layer deposition processes without compromising the quality of deposited layers.

Implementation Method 1

The rounded surface of the heater terminal opposes the upper surface of the heater body and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 2

The heating element in generally arranged to communicate heat to one or more substrate supported on the ceramic heating element through the ceramic material forming the ceramic heater, the ceramic material relaying heat generated by the heating element to heat the substrate to the desired deposition temperature

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230212752A1Substrate supports, semiconductor processing systems having substrate supports, and methods of making substrate supports for semiconductor processing systems
Publication Date: 2023.07.06 ASM IP HLDG BV
  • US20230212752A1 patent drawing
  • US20230212752A1 patent drawing
  • US20230212752A1 patent drawing

AI summary

A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.