Electric Discharge Tubes TRIZ Cases

A double-sided sputtering target system rotates two distinct material targets within a single chamber to enable in-situ deposition.

A ceramic substrate support embeds a heater terminal with a rounded surface to limit internal stress during heating.

Transformer isolates heater elements from earth ground to reduce arcing damage on substrates.

Plasma-densified material layers enable selective thin film etching without increasing RF power, preventing reactor component damage from high ion bombardment.

Modulating bias voltage segregates lighter inert ions for selective bombardment, eliminating precursor purging to boost atomic layer etch throughput.

A selectivity proximity push process widens recesses in semiconductor fins using fluorine and hydrogen plasma.

A segmented insulation assembly with an annular groove disrupts ion beam paths to prevent charged film accumulation on semiconductor implanter components.

Optimizing the composition of Fe-Co sputtering targets with tantalum and niobium suppresses cracking during high-power deposition, enabling stable formation of soft magnetic films.

Phase inversion of a polyamic acid precursor creates a continuous production process that eliminates vacuum drying and boosts scalability.

A three-piece focus ring uses a vertically movable middle segment to adjust plasma sheath height.

A cooled reflective adapter plate focuses radiant energy onto substrates within a deposition chamber.

Segmented electrodes direct vaporized material onto hard-to-reach interior surfaces, reducing waste from chamber wall deposition.

Segmented exhaust pressure control manages gas flow uniformity to resolve chemical non-uniformities in plasma processing.

Grooved sliding vacuum seals maintain stable pressure during sample carrier movement, preventing contamination and ensuring collision-free operation.

Dynamic rotation of the scan region prevents it from leaving the observation area during TEM lamella ablation while maintaining uniform thickness.

A controller monitors initial ion beam profiles and automatically tunes parameters to match desired implantation targets.

A Schottky thermal field emitter integrates a beam splitter microhole array via a standoff to split electron beams near the source.

A plasma reactor heating apparatus uses a programmable power supply and bandpass filter assembly to deliver AC heating powers to matched heater units.

Segmented plasma regions isolate cleaning operations from film deposition zones, preventing fluorine contamination during silicon nitride growth.

Self-limiting chemisorption of polar fluorocarbons eliminates physical adsorption defects, resolving in-plane uniformity issues in atomic layer etching.

Multi charged particle beam inspection apparatus measures interfering factors to calibrate secondary electron images.

A titanium and nickel bi-metal foil substrate serves as a stationary beam position and intensity monitor.

A temperature control unit maintains the substrate hotter than the chamber to generate thermophoretic force.

A cyclical plasma etching apparatus controls gas dosing and ion bombardment energy to remove thin material layers with high reproducibility.

A charged particle beam apparatus uses dual temperature sensors to monitor thermal states during specimen transport.

Angular contact rows in a receptacle connector reduce crosstalk and maintain impedance, enabling higher data transmission rates.

A laser source integrated into an SEM system enhances electron collection via the photovoltaic effect to improve image contrast.

A detector monitors root-mean-square current on the power delivery conduit to generate a controlled signal for real-time RF power adjustment.

A cleaning method uses a shock wave to dislodge contaminants from a chamber stage.

A ternary non-evaporable getter alloy absorbs hydrogen and carbon monoxide gases through sorption.

High-frequency generator injects reference signal into oscillator to stabilize fundamental frequency and reduce spurious components.

Oblique plasma projection and suction collect by-products, preventing deposition on liquid crystal panels without inversion.

Optimizing bias power in plasma sputtering balances deposition and etching to fill high aspect ratio recesses without voids or overhangs.

Nested apertures in a charged particle doublet increase transmission efficiency by allowing larger initial apertures while maintaining beamlet precision.

Composite turbo molecular pump uses segmented inlet ports to isolate vacuum pathways.

A compound helical inductor coil uses a dielectric insulator to separate primary and secondary windings.

A digital current adder sums unregulated currents to drive deflection coils with high precision.

A continuous plasma processing system with an adjustable electrode moves a second electrode to push processed objects off a carrier plate.

Periodic high and low power plasma treatments resolve the trade-off between etch selectivity and film integrity, ensuring uniform removal without defects.

A pin plunger uses a bimetal housing to generate warping force that compensates for spring elastic force variations.

A multiple charged particle beam apparatus uses grating lenses and aperture arrays to form precise beam patterns.

A control unit acquires objective aperture images and binarizes them to determine position for automatic alignment.

A charged particle beam drawing apparatus separates graphic and attribute information into distinct files for independent modification.

Asymmetric conductive layers in the ion filter suppress positive ion feedback without reducing electron transmittance, improving position resolution.

Segmented holding surfaces prevent conductive deposition on the attraction zone, maintaining electrostatic chuck reliability during plasma processing.

Iterative feedback loops compensate for resist scattering to align actual patterns with target specifications.

A deposition apparatus uses a cooling unit to suppress substrate deformation during film formation.

Track-mounted gas injectors adjust position and flow rate to resolve manufacturing precision versus device complexity contradictions during substrate etching.

Adjusting voltage on the outer peripheral member compensates for physical wear, maintaining etch shape uniformity and in-plane stability.

A dielectric gas distribution plate with a heat reflective back layer prevents arcing and reduces power absorption in plasma reactors.