Plasma Processing Outer Peripheral Member Voltage Control

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Solution Overview

Problem

The wear of the outer peripheral member, or edge ring, in plasma processing apparatuses leads to degradation of process characteristics such as etch shape and etch rate, affecting the results of wafer processing.

Innovation Solution

A method involving a plasma processing apparatus with a stage, an outer peripheral member, and a power supply to apply voltage, where the voltage applied to the outer peripheral member is adjusted based on stored information to maintain optimal process parameters, thereby controlling the plasma process conditions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If voltage is applied to the outer peripheral member to compensate for wear, then etch shape uniformity is improved, but process characteristic degradation occurs

Engineering Contradiction:
Improveetch shape uniformityVSAvoidprocess characteristic stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies voltage to the outer peripheral member as a controllable parameter to compensate for wear effects. By changing the electrical parameter (voltage) of the outer peripheral member, the system maintains etch shape uniformity despite physical wear, resolving the contradiction between maintaining precision and avoiding process degradation

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The system uses feedback control where the voltage applied to the outer peripheral member is adjusted based on measured wear or process characteristics. This feedback mechanism allows the system to automatically compensate for wear while maintaining stable process characteristics, addressing both the precision and reliability concerns

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If voltage is applied to the outer peripheral member, then in-plane uniformity is maintained, but process parameter control becomes complex

Engineering Contradiction:
Improvein-plane uniformityVSAvoidprocess parameter control
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The outer peripheral member is given multiple functions: it serves as both a mechanical component defining the etch region and as an electrical component that can be voltage-controlled. This multi-functionality allows a single component to maintain in-plane uniformity without requiring separate control systems, reducing overall complexity while achieving the desired precision

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents the degradation of process characteristics by controlling the etch rate and maintaining in-plane uniformity, ensuring consistent and precise plasma processing results.

Implementation Method 1

a plasma process under a process condition including the adjusted process parameter

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS11211229B2Processing method and plasma processing apparatus
Publication Date: 2021.12.28 TOKYO ELECTRON LTD
  • US11211229B2 patent drawing
  • US11211229B2 patent drawing
  • US11211229B2 patent drawing

AI summary

A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.