Particle Beam Lithography Proximity Effect Compensation
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Solution Overview
Problem
Conventional lithography technologies face challenges in achieving precise pattern fidelity due to proximity effects in particle beam lithography processes, particularly in miniaturized semiconductor manufacturing where the resolution limitations of optical lithography systems are overcome by electron beam, X-ray, or EUV lithography, but these methods suffer from inaccuracies in energy distribution and scattering in resist layers.
Innovation Solution
A method involving recursive adjustments using control and target patterns, measurement values, and an adjusting strategy to produce a corrected pattern that aligns with target value ranges, ensuring improved precision by iteratively refining the input pattern for the lithography process through a series of steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If electron beam lithography is used to overcome resolution limitations of optical lithography, then resolution is improved, but proximity effects cause inaccuracies in energy distribution and scattering in resist layers
Solution Approach 1:
The method performs preliminary actions by generating control patterns and performing dissection processes before the actual lithography exposure. The control pattern is created with control boundaries and control points that define the desired pattern geometry, allowing the system to pre-calculate and compensate for proximity effects before the particle beam actually exposes the resist layer
Solution Approach 2:
The method implements feedback by calculating comparison values between target measurement values (from target pattern) and actual measurement values (from actual pattern), then using these comparison values to generate corrected patterns. This iterative feedback loop continuously refines the input pattern to compensate for proximity effects and improve pattern fidelity
2Manufacturing precision
If recursive adjusting means are used to compensate proximity effects, then pattern fidelity is improved, but process complexity increases
Solution Approach 1:
The method segments the lithography process into distinct computational stages: generating control pattern with control boundaries, performing dissection process to produce control points, calculating target measurement values from target pattern, obtaining actual measurement values from actual pattern, calculating comparison values, and generating corrected patterns. This segmentation allows each stage to be optimized independently while maintaining overall pattern fidelity
Solution Approach 2:
The method changes parameters by adjusting the control pattern parameters (control boundaries, control points) based on comparison values between target and actual measurements. The correcting means modifies the input pattern parameters iteratively to compensate for proximity effects, transforming the pattern geometry to achieve the desired target pattern
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly enhances the precision of particle beam lithography processes by compensating for proximity effects, leading to improved pattern fidelity and resolution in semiconductor manufacturing, aligning actual patterns with target specifications.
Implementation Method 1
The electron beam lithography technology is based on the concept of a scanning election microscope (SEM). The wavelength of the electron beam of the lithography technology is only several thousandth of the deep ultra violet light, hence producing excellent resolution.
Implementation Method 2
electron beam lithography technology is also used in the direct writing of a wafer for directly printing the pattern on a photosensitive material disposed on a wafer surface
Implementation Method 3
these methods suffer from inaccuracies in energy distribution and scattering in resist layers
Data Source
AI summary
A method for compensating proximity effects of particle beam lithography processes is provided. The method includes the following steps. A control pattern is provided. A dissection process is provided. A set of control points are provided. The control pattern is defined as an input pattern of a lithography process. A target pattern is provided. A set of target points are produced. A set of target measurement values are provided. An actual pattern is defined. A set of actual measurement values are provided. A set of comparison values are calculated. An adjusting strategy is provided. A corrected pattern is produced. The corrected pattern is defined as an updated input of the lithography process.