Ion Source Insulation Step Difference Prevents Film Deposition
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Solution Overview
Problem
The ion source head structure in semiconductor ion implanters faces challenges in maintaining the insulating effect of the insulation assembly due to deposition of a charged film from the ion beam, leading to reduced service life and increased equipment and labor costs for replacement.
Innovation Solution
The ion source head structure incorporates an insulation assembly with a step difference on its outer surface, featuring an annular groove and a locking mechanism, which prevents easy deposition of the ion beam and maintains the insulation, thereby reducing the frequency of replacement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulation assembly is placed between the filament clamp and cathode clamp to maintain voltage difference, then the insulating effect is initially effective, but the charged film deposition from ion beam causes loss of insulating effect over time
Solution Approach 1:
The outer surface of the insulation assembly is segmented into multiple surfaces through protrusions and recesses, creating a multi-level structure that prevents continuous charged film deposition and maintains insulating effectiveness over extended periods
Solution Approach 2:
The insulation assembly transitions from a simple flat surface to a three-dimensional multi-level structure with protrusions and recesses, adding spatial complexity that disrupts the ion beam path and charged film deposition, thereby extending service life
2Reliability
If the insulation assembly is replaced frequently to maintain insulating effect, then the insulating effect is maintained, but equipment and labor cost increases
Solution Approach 1:
The multi-level outer surface structure segments the deposition areas, preventing complete coverage by charged film and extending the time between replacements, thereby reducing loss of time and operational disruption
Solution Approach 2:
The protrusions and recesses create partial shielding effects that prevent complete film deposition across the entire surface, allowing the insulation assembly to maintain effectiveness beyond what a flat surface would achieve
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design prolongs the service life of the insulation assembly, decreases the need for frequent replacements, and lowers equipment and labor costs by preventing short-circuit issues and maintaining the voltage difference between the filament and cathode.
Implementation Method 1
The filament produces hot electrons after being heated
Implementation Method 2
The hot electrons impact the cathode through the voltage difference to produce more evenly distributed hot electrons at the cathode. The hot electrons react with the gas material or the solid material in a chamber of the ion source head structure to generate ions
Implementation Method 3
an insulation assembly has to be configured between a clamp of the cathode and a clamp of the filament to prevent loss of the voltage difference from conduction of the two clamps
Implementation Method 4
an inner surface of the ion chamber and an outer surface of each component of the ion source head structure are exposed to a distribution range of the ion beam, a layer of a charged film is deposited on the surface of the insulation assembly
Data Source
AI summary
An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.