Substrate Processing Method for Uniform Etch Selectivity
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Solution Overview
Problem
Current methods for selectively removing thin films from stepped structures in semiconductor manufacturing lack uniform etch selectivity across the entire thickness range, leading to inefficiencies and increased production costs due to the need for thicker film deposition and potential defects from ion bombardment.
Innovation Solution
A substrate processing method involving alternating plasma process conditions to change the bonding structure of thin films on upper and lower surfaces of stepped structures, while maintaining the side film's integrity, using directional plasma ions and hydrogen-containing gases to enhance etch selectivity through isotropic etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma power is increased to strengthen ion bombardment to remove upper and lower films, then etch selectivity is improved, but film bonding structure is weakened causing defects
Solution Approach 1:
The patent applies periodic action by alternating between high power plasma treatment (to enhance etch selectivity) and low power plasma treatment (to maintain film bonding structure). This periodic switching allows the system to achieve both high etch selectivity during removal operations and film integrity during deposition or stabilization phases, resolving the contradiction between removing films effectively and maintaining structural reliability
Solution Approach 2:
The patent implements dynamics by making plasma power adjustable and variable during the process. The system dynamically transitions between different power states (high and low) based on process requirements, allowing optimization of both etch selectivity and film bonding structure maintenance throughout the manufacturing cycle
2Reliability
If plasma power is decreased to maintain film bonding structure, then film integrity is preserved, but etch selectivity is reduced requiring thicker film deposition
Solution Approach 1:
By periodically applying high power plasma treatment, the system temporarily enhances etch selectivity to enable effective film removal without requiring excessive film thickness, while low power phases maintain bonding structure integrity, thus improving productivity without sacrificing reliability
Solution Approach 2:
The patent changes plasma power parameters dynamically, switching between high and low power states to optimize both etch selectivity and film bonding structure. This parameter variation allows the system to achieve effective film removal at appropriate thicknesses while maintaining structural integrity
3Manufacturing precision
If high plasma power is applied to remove upper and lower films, then etch selectivity is enhanced, but ion bombardment causes defects
Solution Approach 1:
The patent uses periodic action by alternating high power plasma (for etch selectivity) with low power plasma (to minimize ion bombardment defects). This temporal separation allows the system to achieve high precision etching while reducing harmful ion bombardment effects through periodic low-power recovery phases
Solution Approach 2:
The patent converts the potentially harmful ion bombardment effect into a beneficial etching mechanism by controlling plasma power timing. High power phases utilize ion bombardment for selective removal, while low power phases allow recovery and reduce defect accumulation, transforming a harmful factor into a controlled, beneficial process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves uniform etch selectivity across the entire thickness range, reducing the need for thicker film deposition and minimizing defects, thereby improving productivity and film uniformity.
Implementation Method 1
by increasing the intensity of the plasma to strengthen ion bombardment, a bonding structure of the upper film and the lower film may be weakened rather than the side film to remove the upper film and the lower film during etching
Implementation Method 2
the film is deposited on the stepped structure through a plasma process
Implementation Method 3
forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer
Data Source
AI summary
A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.