Moveable Gas Injectors for Etching Chamber Uniformity
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Solution Overview
Problem
In semiconductor fabrication, especially during EUV lithography, uneven gas distribution in etching chambers leads to 'process fingerprints' causing variations in substrate fabrication, which can result in degraded chip performance or unusable chips due to low tolerance for error in photomask etching.
Innovation Solution
The implementation of moveable and adjustable gas injectors within a track system in the etching chamber, allowing for precise adjustment of gas injector locations and flow rates to ensure uniform gas distribution and plasma formation, thereby enhancing the uniformity of substrate etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas injectors are fixed in position, then device complexity is reduced, but gas distribution uniformity deteriorates
Solution Approach 1:
The gas injectors are made moveable along the chamber walls via tracks, allowing dynamic adjustment of their positions. This enables the system to adapt gas distribution patterns to achieve uniformity without requiring a complex array of fixed injectors throughout the chamber.
Solution Approach 2:
The system allows changing the positional parameter of gas injectors along the chamber walls. By adjusting where gases are introduced, the system can optimize gas distribution uniformity while maintaining a relatively simple injector architecture.
2Manufacturing precision
If multiple gas injectors are added to improve gas distribution, then gas distribution uniformity improves, but device complexity increases
Solution Approach 1:
Instead of adding more fixed injectors, the system uses a smaller number of moveable injectors that can be repositioned along tracks. This dynamic approach achieves uniform gas distribution with fewer physical components.
Solution Approach 2:
Each moveable gas injector serves multiple functions by being able to operate at different positions along the chamber wall. A single injector can replace multiple fixed injectors by moving to different locations to deliver gas where needed.
3Manufacturing precision
If gas injector positions are adjusted, then gas distribution uniformity improves, but ease of operation deteriorates
Solution Approach 1:
The system includes controllers that automatically control the moveable gas injectors, enabling self-adjustment of gas distribution parameters without requiring manual intervention for each adjustment.
Solution Approach 2:
The system monitors gas distribution and substrate etching uniformity, then uses controllers to automatically adjust injector positions and flow rates to maintain optimal conditions, reducing operational complexity.
4Manufacturing precision
If gas flow rates are precisely controlled, then etching uniformity improves, but device complexity increases
Solution Approach 1:
Controllers monitor the etching process and gas distribution, then automatically adjust gas flow rates to maintain uniform etching across substrates, achieving precision without requiring complex manual control systems.
Solution Approach 2:
The system automatically controls and adjusts gas flow rates through integrated controllers, enabling precise etching uniformity without requiring complex external flow control equipment or manual intervention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves the uniformity of gas and plasma distribution, leading to more consistent substrate etching and increased reliability in chip production by dynamically adjusting gas injector positions and flow rates during the etching process.
Implementation Method 1
a source of the processing gas... admitting the processing gas into the etching chamber
Data Source
AI summary
An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.