Deposition Apparatus with Cooling and Separation for Substrate Deformation
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Solution Overview
Problem
Existing deposition apparatuses face challenges in suppressing substrate deformation and improving throughput, especially when forming films on both surfaces of substrates, and in enabling simultaneous processing of multiple substrates without contamination between deposition units.
Innovation Solution
A deposition apparatus with a holding unit featuring opposite chucks to manage substrates, a driving unit for moving substrates through a deposition area, and a cooling unit to prevent deformation, along with a separation unit to prevent contamination between deposition units, allowing for simultaneous film formation on both surfaces of multiple substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a substrate is transported through a deposition apparatus to form a film, then film formation is achieved, but the substrate may be heated beyond appropriate temperature and deformed
Solution Approach 1:
The deposition apparatus is divided into multiple independent deposition units (first deposition unit, second deposition unit) that can operate simultaneously on different substrates. This segmentation allows the system to process multiple substrates in parallel, reducing the temperature exposure time for each substrate and preventing deformation while maintaining film formation quality.
Solution Approach 2:
Multiple deposition units are combined within a single chamber to perform simultaneous film formation on multiple substrates. This merging of deposition units enables parallel processing, which reduces the overall processing time and prevents substrate deformation by minimizing the duration of temperature exposure.
2Productivity
If a deposition apparatus forms films on both surfaces of substrates sequentially, then complete film coverage is achieved, but throughput is reduced due to increased transportation time
Solution Approach 1:
The substrate processing is segmented into simultaneous dual-sided film formation using opposite chucks and multiple deposition units. While one surface is being processed on the first chuck, the other surface is processed on the second chuck, eliminating sequential transportation time and doubling the throughput.
Solution Approach 2:
The system transitions from sequential single-sided processing to simultaneous dual-sided processing by utilizing the third dimension (opposite sides of the substrate). By placing chucks on opposite sides and using multiple deposition units, the system processes both surfaces concurrently, effectively doubling productivity without increasing transportation time.
3Productivity
If multiple substrates are processed simultaneously to improve throughput, then productivity increases, but contamination between deposition units may occur
Solution Approach 1:
A separation unit is extracted and positioned between the first and second deposition units to physically isolate their processing spaces. This separation prevents harmful factors such as film material or plasma from one deposition unit from contaminating the other deposition unit, enabling simultaneous multi-substrate processing without cross-contamination.
Solution Approach 2:
The separation unit acts as an intermediary barrier between the first and second deposition units. It allows both deposition units to operate simultaneously at full power without direct interaction, preventing contamination while maintaining high throughput for multi-substrate processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively suppresses substrate deformation and enhances throughput by enabling efficient film formation on both surfaces of multiple substrates while preventing contamination between deposition units, thus improving processing efficiency and reducing operational complexity.
Implementation Method 1
a cooling unit configured to cool the holding unit
Implementation Method 2
a first deposition unit configured to form a film on the first surface of the first substrate held by the first chuck; a second deposition unit configured to form a film on the second surface of the second substrate held by the second chuck
Implementation Method 3
In the manufacture of an electronic device, various films can be formed on a substrate by a plasma process such as plasma PVD or plasma CVD
Data Source
AI summary
A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.