Multilayer Ceramic Electrode Interface Doping for Thin-Layer Reliability
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Solution Overview
Problem
The miniaturization of ceramic electronic devices, such as multilayer ceramic capacitors, poses challenges in maintaining insulation reliability and continuity modulus as dielectric and internal electrode layers are thinned, leading to potential performance deterioration.
Innovation Solution
A ceramic electronic device design where concentration peaks of two or more types of metals different from the main component metal of the internal electrode layer are strategically positioned between dielectric and internal electrode layers, achieved through a manufacturing method involving sputtering of metal patterns on both faces of the internal electrode patterns, allowing for individual effects on insulation reliability and continuity modulus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the dielectric layer and internal electrode layer are thinned to increase capacity value and reduce device size, then the number of stacked layers can be increased and device miniaturization is achieved, but insulation reliability and continuity modulus deteriorate
Solution Approach 1:
The patent applies local quality by introducing specific metal elements (such as稀土 elements like La, Ce, Nd) at particular locations within the dielectric layer, specifically at the interface with the internal electrode layer. This localized doping enhances insulation reliability at critical regions without requiring overall thickening of the dielectric layer, thus maintaining miniaturization while improving reliability.
Solution Approach 2:
The patent employs composite materials by combining the dielectric layer with specific metal elements to create a composite structure. The dielectric layer contains dispersed metal particles or doped regions that provide enhanced insulation properties. This composite approach allows thin dielectric layers to maintain high insulation reliability through the synergistic effects of the base dielectric material and the embedded metal elements.
2Productivity
If the internal electrode layer is thinned to increase the number of stacked layers, then productivity and capacity density are improved, but continuity modulus deteriorates
Solution Approach 1:
The patent applies local quality by introducing specific metal elements (such as稀土 elements like La, Ce, Nd) at particular locations within the dielectric layer, specifically at the interface with the internal electrode layer. This localized doping enhances insulation reliability at critical regions without requiring overall thickening of the dielectric layer, thus maintaining miniaturization while improving reliability.
Solution Approach 2:
The patent employs composite materials by combining the dielectric layer with specific metal elements to create a composite structure. The dielectric layer contains dispersed metal particles or doped regions that provide enhanced insulation properties. This composite approach allows thin dielectric layers to maintain high insulation reliability through the synergistic effects of the base dielectric material and the embedded metal elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the deterioration of insulation reliability and continuity modulus, enhancing the performance of ceramic electronic components, especially when dielectric layers are formed thin, by ensuring the metals' effects are achieved individually and synergistically, thereby improving the overall reliability and longevity of the device.
Implementation Method 1
metal patterns each of which is made of one of two or more types of metals different from a main component metal of the internal electrode pattern are formed on both main faces of the internal electrode pattern by sputtering
Data Source
AI summary
A ceramic electronic device includes a multilayer chip in which a dielectric layer and an internal electrode layer are alternately stacked. Concentration peaks of two or more types of metals different from a main component metal of the internal electrode layer exist at different positions in a stacking direction of the dielectric layer and the internal electrode layer, between the dielectric layer and the internal electrode layer.