Ceria–Hydroxamic Acid CMP Composition for Patterned Dielectric Polishing
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Solution Overview
Problem
Existing chemical mechanical polishing (CMP) compositions face challenges in achieving high throughput, patterned removal rates, and planarization efficiency, particularly with the introduction of 3D NAND applications and device miniaturization.
Innovation Solution
A CMP composition comprising ceria particles and hydroxamic acid compounds, specifically designed to include non-cyclic alkyl groups, halide- or alkyl-substituted aryl groups, or aryl groups with alkyl linking groups, and having a partition coefficient of at least 0.9, is used to polish dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP compositions are used, then basic polishing function is provided, but high throughput and patterned removal rates are not achieved
Solution Approach 1:
The patent modifies the chemical composition parameters of the CMP slurry by introducing specific hydroxamic acid compounds with defined molecular structures (including non-cyclic alkyl groups, halide-substituted aryl groups, and aryl groups with alkyl linking groups) and controlling their partition coefficients. These parameter changes enable the composition to achieve high patterned removal rates while maintaining high throughput, resolving the contradiction between productivity and reliability.
2Productivity
If polishing rate is increased, then throughput is improved, but self-stopping performance deteriorates
Solution Approach 1:
The patent employs hydroxamic acid compounds with specifically controlled partition coefficients (at least about 0.9) to achieve a balance between polishing rate and self-stopping performance. The molecular structure parameters of these compounds enable the composition to maintain high patterned removal rates while achieving low blanket removal rates, thus preserving self-stopping capability even at high polishing rates.
3Productivity
If blanket removal rate is increased, then throughput is improved, but planarization efficiency deteriorates
Solution Approach 1:
The patent uses hydroxamic acid compounds with specific partition coefficients to decouple blanket removal rate from planarization efficiency. By controlling the chemical parameters of the slurry composition, the system achieves high blanket removal rates while maintaining low pattern removal rates, thereby preserving self-stopping behavior that is critical for planarization efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition provides high dielectric layer patterned wafer polishing rates and improved self-stopping performance, facilitating high pattern removal rates transitioning to low blanket removal rates, enhancing polishing efficiency.
Implementation Method 1
Chemical mechanical polishing (CMP) compositions and methods for polishing (or planarizing) the surface of a substrate are well known
Implementation Method 2
a hydroxamic acid compound including a non-cyclic alkyl group having from three to ten carbon atoms
Data Source
AI summary
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles dispersed in the liquid carrier; and a hydroxamic acid compound, wherein the hydroxamic compound comprises at least one of (i) a non-cyclic alkyl group having from three to ten carbon atoms, (ii) a halide-substituted phenyl group, (iii) a phenyl group or a substituted phenyl group and an alkyl linking group coupling the phenyl group or substituted phenyl group to a hydroxamic acid group, and (iv) a hydroxamic acid compound having a partition coefficient of at least about 0.9.