Polishing Compositions With Abrasives TRIZ Cases

Planar rigid amide compounds in copper CMP slurry improve adsorption, limiting dishing and erosion without slowing polishing.

A water-based SiC polishing slurry uses an oxidizer, electrophile, and abrasive to raise removal rate while limiting corrosion, discoloration, and defects.

Organometallic mediators pair oxidation with abrasive removal to raise silicon carbide polishing rates without discoloration or substrate defects.

Sequentially filtering abrasive dispersions, chemical solutions, and final mixtures reduces coarse particles and semiconductor substrate defects.

Specific hydroxamic acid structures and ceria particles help polish dielectric patterns quickly while supporting low blanket removal and self-stopping.

Halogen oxoacids and amine inhibitors boost molybdenum removal while limiting static etch.

Adding polyether amine to cerium oxide slurry resolves the selectivity versus rate trade-off by enhancing silicon dioxide polishing speed.

Chemical mechanical polishing slurry uses pyridine derivatives to boost silicon nitride removal rates.

Polyoxyethylene alkyl ether surfactant prevents white cloudiness formation on resin coating films during polishing intervals.

A composite cleaning mixture uses colloidal resin and abrasives to remove industrial dust from vehicle surfaces.

A polishing composition uses abrasive grains with multiple local maximum points in particle size distribution to enhance surface finishing.