Copper CMP Slurry Composition for High Rate and Low Dishing
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Solution Overview
Problem
Existing CMP slurries struggle to achieve high polishing rates for copper films while minimizing surface defects like dishing and erosion, and often result in reduced polishing rates when using conventional dishing inhibitors.
Innovation Solution
A CMP slurry composition comprising specific compounds with structural units represented by Formulas 1 or 2, which include a planar rigid amide group, enhances adsorption to copper films, reducing dishing and erosion while maintaining high polishing rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional dishing inhibitors are used to minimize surface defects, then dishing and erosion are reduced, but polishing rate decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the slurry by introducing specific compounds containing planar rigid amide groups (Formulas 1 and 2) with particular molecular structures including C1-C5 alkylene groups and monovalent cations. These parameter changes in chemical composition enable the slurry to achieve both high polishing rate and low dishing/erosion simultaneously, resolving the contradiction between manufacturing precision and productivity
Solution Approach 2:
The patent creates a composite slurry system combining multiple components: solvent, abrasive agent, and the specific compounds with planar rigid amide groups (Formulas 1 and 2). This composite material approach allows the slurry to exhibit synergistic effects where the combination of components achieves both high polishing rate and excellent surface flatness, overcoming the trade-off between productivity and manufacturing precision
2Productivity
If high polishing rate is achieved for copper films, then productivity increases, but surface defects like dishing and erosion increase
Solution Approach 1:
The compounds containing planar rigid amide groups (Formulas 1 and 2) act as intermediary substances in the slurry that mediate between the abrasive action and the copper film surface. These intermediaries adsorb onto the copper surface and modify the interaction mechanics, enabling high polishing rate while preventing excessive material removal that causes dishing and erosion, thus resolving the contradiction between productivity and manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves improved surface flatness by minimizing dishing and erosion without compromising polishing rate, offering superior polishing performance.
Implementation Method 1
enhances adsorption to copper films, reducing dishing and erosion while maintaining high polishing rates
Data Source
AI summary
A CMP slurry composition for polishing copper and a copper film polishing method using the same, the CMP slurry composition includes a solvent; an abrasive agent; and a compound including a structural unit represented by Formula 1 or a compound including a structural unit represented by Formula 2,