Cerium Oxide Polishing Liquid for Suppressing Falling Traces
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Solution Overview
Problem
The existing CMP technologies face challenges in polishing members with resins and silicon compounds, leading to the generation of falling traces on the polished surface, which hinders surface flattening and connectivity in electronic device manufacturing.
Innovation Solution
A polishing liquid containing cerium oxide abrasive grains, ether compounds with a hydroxy group, and specific organic components is developed to suppress the generation of falling traces by chemically bonding with silicon compounds, improving the polishing rate and surface quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional polishing liquid is used for polishing members containing resin and silicon compound particles, then polishing can be performed, but falling traces are generated on the polished surface and surface flattening is hindered
Solution Approach 1:
The patent changes the chemical composition parameters of the polishing liquid by adding specific organic compounds (carboxylic acid or sulfonic acid) to alter the chemical interaction between the polishing liquid and silicon compound particles, thereby suppressing falling trace generation and improving surface flattening quality
Solution Approach 2:
The patent creates a composite polishing liquid system combining cerium oxide abrasive grains with specific organic compounds (carboxylic acid or sulfonic acid), where the composite formulation works synergistically to prevent silicon compound particle detachment while maintaining effective polishing action
2Productivity
If polishing is performed on members with resin and silicon compounds using existing CMP technology, then material removal occurs, but the polished surface develops falling traces that reduce surface quality
Solution Approach 1:
The patent modifies the chemical composition of the polishing liquid by introducing specific organic acids or sulfonic acids, which change the chemical reaction parameters during polishing to suppress silicon compound particle detachment, thereby improving surface quality without sacrificing polishing rate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed polishing liquid effectively reduces the diameter of falling traces and enhances the polishing rate for metallic materials, ensuring a smoother and more connected surface for electronic device manufacturing processes.
Implementation Method 1
A polishing liquid containing cerium oxide abrasive grains, ether compounds with a hydroxy group, and specific organic components is developed to suppress the generation of falling traces by chemically bonding with silicon compounds
Implementation Method 2
A polishing liquid containing cerium oxide abrasive grains
Data Source
AI summary
A polishing liquid for polishing a member to be polished, the polishing liquid containing abrasive grains containing cerium oxide, in which the member to be polished contains a resin and particles containing a silicon compound. A polishing method including polishing a member to be polished containing a resin and particles containing a silicon compound by using the polishing liquid. A method for manufacturing a component, including obtaining a component by using a polished member polished by the polishing method. A method for manufacturing a semiconductor component, including obtaining a semiconductor component by using a polished member polished by the above-described polishing method.