Other Chemical Processes TRIZ Cases

A desiccant in the light control layer absorbs moisture to stop coloring-agent aggregation and preserve color reproduction in harsh humidity.

A styrene-acrylic copolymer CMP slurry balances insulating-to-stopper selectivity with storage stability by limiting grain aggregation and over-polishing.

A CMP slurry balances abrasion, oxidation, and passivation to suppress dishing and erosion on cobalt-containing films.

A porous stainless sintered friction member uses silicone resin in its pores to resist water-film lubrication and keep actuator friction stable in humidity.

Ceria-coated abrasives and amphoteric gelatin raise STI CMP oxide removal rates at low abrasive loading for higher-throughput polishing.

Surface-bonded amine oxide particles raise boron-doped polysilicon CMP rate while improving selectivity, roughness, and wafer defect control.

Cerium-based CMP slurry with 4-pyrone or picolinic acid and monocarboxylic acid boosts oxide polishing on convex wafers while limiting scratches.

Cerium CMP slurry with 4-pyrone and hydroxyalkyl nitrogen additives boosts oxide polishing on patterned wafers while limiting scratches.

A pyridine-promoted slurry selectively polishes silicon oxide over silicon nitride to flatten display insulation layers and reduce residual defects.

Negative-zeta abrasive grains and alkylamine at acidic pH raise Low-k and silicon nitride removal rates while tuning selectivity and limiting oxide defects.

A multivalent metal oxide slurry raises CMP removal rates for insulating materials by tuning the low-valence ratio of abrasive grains.

Functionalized silica and silane in CMP slurry raise tungsten and cobalt removal speed while limiting defects and corrosion.

Controlling silica water affinity and particle shape raises wafer polishing speed while reducing defects and scratches in planarization.

Immobilized picolinic acid groups on solid supports selectively adsorb Ni from battery waste solutions while enabling reusable Ni and Co separation.

A curved-flat-curved window profile with variable thickness improves fold durability and reduces crease visibility in foldable displays.

A controlled oxidant ratio in ruthenium CMP suppresses corrosion while keeping polishing speed stable on semiconductor substrates.

A halogen-free CMP slurry uses colloidal silica, inorganic salt, and polymer to raise oxide/nitride-to-polysilicon selectivity and cut residues.

A tuned rubber, tackifier, and plasticizer blend seals tire through-holes while limiting heat- and centrifugal-force flow during storage and travel.

Imidazolium-based poly(ionic liquid)s form a protective film in tungsten CMP slurries to reduce dishing and erosion while preserving removal rate.

Non-combustible interspace fillers and front panels improve LED video board fire resistance while helping conduct heat away from the LEDs.

Permanganate-based CMP slurry improves hardmask removal rate, selectivity, and pH tunability for boron, silicon, chromium, and zirconium films.

Cerium oxide abrasives with hydroxy ether and organic acids suppress falling traces on resin-silicon surfaces while maintaining polishing rate.

Na or K intercalation with thorough Li and TMAOH removal helps MXene films keep high conductivity under high humidity.

Low-molecular-weight HEC and surfactants keep CMP slurry dispersible after dilution, improving fine-filter use and surface quality.

Electrostatically active phosphonium polymers in CMP slurries curb tungsten dishing and erosion while preserving removal rate and wafer planarity.

A transparent DMDP-EVA tape captures lead from perovskite solar cells, limiting water leakage while preserving light transmission and cell stability.

A glass-ceramic sealed wall enables manifold-free crossflow fuel cell stacks, improving fuel distribution, sealing, and thermal stress control.

Halogenation plus ligand-assisted dissolution enables faster ruthenium CMP while limiting pitting, corrosion, and post-etch roughness.

Positively charged surface-modified silica boosts CMP polishing rate and planarization while limiting scratches and particle size change.

Copper-complex ratio tuning enables thin near-infrared cut films with strong absorption, visible transmittance, and hot-humid stability.

Dual-amine and organic-acid CMP chemistry raises molybdenum removal while limiting corrosion, static etch, and wafer defects.

A thiol or thiolether chelator helps CMP slurry bond with ruthenium, weaken Ru bonds, and raise metal-layer polishing rate.

A dual-polymer silica polishing composition cuts haze and LPD on silicon wafers by tuning polymer adsorption instead of using hydroxyethyl cellulose.

A hydrophobic surface treatment layer raises water contact angle to cut capillary forces and reduce semiconductor pattern collapse during cleaning and drying.

Acrylic dispersant coatings keep abrasive particles separated under heat, improving slurry stability, polishing efficiency, and scratch control.

Opposite zeta-potential abrasive removes residual light-blocking material from transmissive areas, improving fingerprint sensor transmittance.

Ceria-coated abrasives and polyol or acetylenic additives raise oxide-to-nitride selectivity and reduce STI trench dishing on patterned wafers.

A radical-curable acrylic seal composition replaces high-viscosity EPDM to enable thin fuel cell seals with low-temperature flexibility.

A CMP slurry using colloidal silica, amino compounds, oxidizer, and passivation control raises cobalt polishing speed while limiting dishing.

An interposed resin film absorbs moisture and sulfur-based gas to limit pressure rise and protect power storage device reliability.

Curved-flat-curved window shaping improves foldable display durability by limiting buckling, wrinkles, and crack formation during repeated bending.

A synergistic mix of ammonia and hydrogen periodate boosts ruthenium CMP removal while maintaining controlled surface quality at near-neutral pH.

Hydroxy acid and metal oxide abrasives raise silicon oxide CMP rates across irregular and flat surfaces while preserving flatness.

A dual-abrasive cationic CMP slurry raises barrier film removal in tungsten polishing while preserving tungsten rate, planarity, and defect control.

An alkaline potassium persulfate CMP slurry controls Co, TiN, and TaN removal while limiting corrosion and stabilizing the TiN:TaN ratio.

A polypropylene-polyphenylene ether blend enables injection-molded battery gaskets with higher heat resistance, better moldability, and lower cost.

A GO-PANI-ZnO-ZIF-8 adsorbent captures polar and non-polar body odor markers while improving durability, stability, and reproducibility.

A high-Tg resin and surfactant stabilize near-infrared filter spectra, preserving sensing accuracy under heat, humidity, and light exposure.

Coated functional fillers in a soft cross-linked binder enable high thermal conductivity while also absorbing EMI in battery pack TIMs.

A porous nickel-tin adsorber captures chromium in the SOFC oxidant path while resisting thermal shock and preserving long-term power output.

Organic acid additives in a tungsten polishing slurry balance chemical etching with mechanical abrasion to reduce dishing and erosion defects.

Aluminum metal reduces AlCl3 in deactivated chloroaluminate catalysts, freeing conjunct polymers for solvent extraction and restoring catalytic activity.

A curable composition uses a reactive silyl polymer and an amine catalyst to form cured articles with high elongation.

A wearable sensor contact surface incorporates a groove to channel sweat and moisture away from the skin interface.

A ceria-based CMP slurry with a cationic polymer polishes silicon oxide, silicon nitride, and polysilicon substrates.

Shrinking and crosslinking polysaccharide beads resolves compression issues while maintaining adsorption efficiency.

Embedding sintered cemented carbide in a copper matrix raises the friction coefficient while reducing gear oil dependency.

A composite filter merges activated carbon with iron-exchanged zeolite to adsorb diverse gaseous pollutants.

Performing hydrolysis in the polymerization liquor eliminates intermediate washing and distillation steps, reducing cycle time and bead attrition.

Double-sided chemical mechanical polishing with a high selectivity ratio removes roughness from both surfaces while maintaining epitaxial layer thickness.

Surface crosslinking with neutralized aluminum salt preserves gel bed permeability during manufacturing, reducing leakage in absorbent articles.

Inner crosslinking creates a microporous super absorbent resin structure that increases absorption speed while reducing reverse osmosis in hygiene products.

Organic peroxide mediates free radical curing to resolve slow moisture diffusion in thick sealant layers.

Phosphorus oxide compounds form protective organic films on copper substrates to enhance surface durability.

Silicon doped metal oxide particles boost ultraviolet absorption coefficients, resolving the trade-off between film transparency and protective performance.

Segmenting the polymer into separate soft and hard domains resolves the trade-off between application ease and block resistance in sealants.

Polishing composition with oxidizing agents controls silicon nitride removal rates.

An HGR-filter prevents media distortion in fixed-angle centrifuges, enabling parallel liquid flow and isolating biological molecules.

Produces hollow aluminosilicate particles with a hybrid core by controlling synthesis parameters to achieve high internal functionalization.

On-site production eliminates transportation costs and VOC emissions by incinerating volatile contents in the primary reactor.

Viscosity control prevents solid graphite settling in aerosol cans, maintaining fire retardant properties without halogenated additives.

Positively charged colloidal silica in a water-based slurry reduces tungsten etching rates while maintaining high removal speeds.

A haloolefin composition maintains stability through controlled water content.

A reversed-phase chromatography method uses a phenyl-functionalized stationary phase to retain and separate glyphosate and AMPA analytes.

Alternating welded blade sections modify rotor mode shapes to enhance aerodynamic damping while reducing manufacturing complexity.

Water-soluble polymer adsorbs onto ultrafine cellulose fibers to provide steric stabilization, maintaining high viscosity in saltwater drilling fluids.

Cyclodextrin and alkylamine form a complex in CMP compositions to enhance planarization efficiency.

Composite iron and clay media breaks down per- and polyfluoroalkyl substances through chemical oxidation.

A sulfur-free elastomer blend uses hydrosilylation crosslinking to improve mechanical properties and temperature resistance.

Chromophore indicators in exterior coatings reflect visible light to reveal wear, eliminating blind maintenance scheduling on aerospace structures.

A CMP composition combines N-heterocyclic and prop-2-ynyloxy-substituted alcohol inhibitors to protect copper surfaces during polishing.

Hydrophobic coatings decouple moisture absorption from handling, preventing premature clogging in humid agricultural planting equipment.

Polymerizing acidic monomers with potassium hydroxide and an encapsulated foaming agent improves absorption rate while maintaining apparent density.

Segmented layers with drainage channels distribute fluids evenly, preventing gel blocking and maintaining structural integrity under load.

Organically modified colloidal silica particles reduce micro-scratches on soft copper and low-k materials while maintaining high removal rates.

Sintered silicon carbide aggregates in a vitrified bond improve material removal rates on hard metals and ceramics.

Salicylic acid forms a new ligand under copper ion catalysis to produce ultrafine Cu2O nanoparticles on porous CuBTC.