Other Chemical Processes TRIZ Cases

A desiccant in the light control layer absorbs moisture to stop coloring-agent aggregation and preserve color reproduction in harsh humidity.

A styrene-acrylic copolymer CMP slurry balances insulating-to-stopper selectivity with storage stability by limiting grain aggregation and over-polishing.

A CMP slurry balances abrasion, oxidation, and passivation to suppress dishing and erosion on cobalt-containing films.

A porous stainless sintered friction member uses silicone resin in its pores to resist water-film lubrication and keep actuator friction stable in humidity.

Ceria-coated abrasives and amphoteric gelatin raise STI CMP oxide removal rates at low abrasive loading for higher-throughput polishing.

Surface-bonded amine oxide particles raise boron-doped polysilicon CMP rate while improving selectivity, roughness, and wafer defect control.

Cerium-based CMP slurry with 4-pyrone or picolinic acid and monocarboxylic acid boosts oxide polishing on convex wafers while limiting scratches.

Cerium CMP slurry with 4-pyrone and hydroxyalkyl nitrogen additives boosts oxide polishing on patterned wafers while limiting scratches.

A pyridine-promoted slurry selectively polishes silicon oxide over silicon nitride to flatten display insulation layers and reduce residual defects.

Negative-zeta abrasive grains and alkylamine at acidic pH raise Low-k and silicon nitride removal rates while tuning selectivity and limiting oxide defects.

A multivalent metal oxide slurry raises CMP removal rates for insulating materials by tuning the low-valence ratio of abrasive grains.

Functionalized silica and silane in CMP slurry raise tungsten and cobalt removal speed while limiting defects and corrosion.

Controlling silica water affinity and particle shape raises wafer polishing speed while reducing defects and scratches in planarization.

Immobilized picolinic acid groups on solid supports selectively adsorb Ni from battery waste solutions while enabling reusable Ni and Co separation.

A curved-flat-curved window profile with variable thickness improves fold durability and reduces crease visibility in foldable displays.

A controlled oxidant ratio in ruthenium CMP suppresses corrosion while keeping polishing speed stable on semiconductor substrates.

A halogen-free CMP slurry uses colloidal silica, inorganic salt, and polymer to raise oxide/nitride-to-polysilicon selectivity and cut residues.

A tuned rubber, tackifier, and plasticizer blend seals tire through-holes while limiting heat- and centrifugal-force flow during storage and travel.

Imidazolium-based poly(ionic liquid)s form a protective film in tungsten CMP slurries to reduce dishing and erosion while preserving removal rate.

Non-combustible interspace fillers and front panels improve LED video board fire resistance while helping conduct heat away from the LEDs.

Permanganate-based CMP slurry improves hardmask removal rate, selectivity, and pH tunability for boron, silicon, chromium, and zirconium films.

Cerium oxide abrasives with hydroxy ether and organic acids suppress falling traces on resin-silicon surfaces while maintaining polishing rate.

Na or K intercalation with thorough Li and TMAOH removal helps MXene films keep high conductivity under high humidity.

Low-molecular-weight HEC and surfactants keep CMP slurry dispersible after dilution, improving fine-filter use and surface quality.

Electrostatically active phosphonium polymers in CMP slurries curb tungsten dishing and erosion while preserving removal rate and wafer planarity.

A transparent DMDP-EVA tape captures lead from perovskite solar cells, limiting water leakage while preserving light transmission and cell stability.

A glass-ceramic sealed wall enables manifold-free crossflow fuel cell stacks, improving fuel distribution, sealing, and thermal stress control.