CMP Composition Dual Corrosion Inhibitors Copper Erosion

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Solution Overview

Problem

Current chemical mechanical polishing (CMP) compositions in the semiconductor industry face challenges in achieving high material removal rates while minimizing erosion and dishing effects, particularly in copper-containing layers with multilevel structures, and require improved performance in reducing static etch rates.

Innovation Solution

A CMP composition comprising inorganic and organic particles, an N-heterocyclic compound as a corrosion inhibitor, a (prop-2-ynyloxy)-substituted alcohol, an oxidizing agent, and a complexing agent in an aqueous medium, with a pH range of 3 to 7, is used to polish metal-containing substrates, particularly copper layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional CMP compositions with single corrosion inhibitor are used, then the composition is simple to formulate, but the polishing performance is insufficient with high static etch rates and erosion

Engineering Contradiction:
Improvepolishing performanceVSAvoidcomposition complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines two different corrosion inhibitors (N-heterocyclic compound and prop-2-ynyloxy-substituted alcohol) in a single CMP composition. This composite approach creates synergistic effects where the N-heterocyclic compound provides primary corrosion protection through chelation, while the prop-2-ynyloxy-substituted alcohol enhances protection and reduces static etch rates, achieving superior polishing performance that neither inhibitor could achieve alone.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes specific parameter ranges for the dual-inhibitor system: N-heterocyclic compound at 0.01-5 wt% and prop-2-ynyloxy-substituted alcohol at 0.1-5 wt%, with pH controlled at 3-7. These parameter changes maximize the synergistic effect between the two inhibitors, achieving low static etch rates and high material removal rates simultaneously.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If high material removal rate is achieved, then productivity increases, but erosion and dishing effects worsen

Engineering Contradiction:
Improvematerial removal rateVSAvoidsurface quality
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent achieves high material removal rates (superior to conventional compositions) while maintaining excellent surface quality by optimizing the dual-inhibitor system. The N-heterocyclic compound controls corrosion during polishing, and the prop-2-ynyloxy-substituted alcohol further suppresses static etch rates, enabling aggressive material removal without the usual trade-off of increased erosion or dishing.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The synergistic combination of two corrosion inhibitors creates a composite protection mechanism that allows high productivity. The N-heterocyclic compound provides immediate corrosion inhibition during mechanical removal, while the prop-2-ynyloxy-substituted alcohol provides sustained protection against static etching, enabling high material removal rates without compromising surface quality.

Inventive Principle:
Principle #40Composite materials

3Manufacturing precision

If conventional corrosion inhibitors are used, then the composition is simple, but static etch rates remain high causing dishing and erosion

Engineering Contradiction:
Improvereduction of dishing and erosionVSAvoidnumber of corrosion inhibitors
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent employs a composite corrosion inhibition strategy using two chemically distinct inhibitors. The N-heterocyclic compound (such as triazole or imidazole derivatives) provides primary protection through strong metal chelation, while the prop-2-ynyloxy-substituted alcohol provides secondary protection and specifically targets static etch rate reduction. This composite approach achieves superior control over dishing and erosion that single inhibitors cannot accomplish.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent applies different inhibitors for different protective functions: the N-heterocyclic compound primarily addresses active corrosion during polishing, while the prop-2-ynyloxy-substituted alcohol specifically targets static etch rates that cause dishing and erosion. This localized functional assignment optimizes surface quality by addressing different degradation mechanisms with specialized inhibitors.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition achieves a high material removal rate with low static etch rates and improved selectivity, effectively addressing the challenges of erosion and dishing in copper-containing layers, and is suitable for CMP processes in semiconductor devices.

Implementation Method 1

at least one type of N-heterocyclic compound as corrosion inhibitor

Methodology Applied
Scientific EffectCorrosion inhibition: Oxidation

Implementation Method 2

at least one type of oxidizing agent

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentEP2688966B1A chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors
Publication Date: 2016.03.09 BASF SE
  • EP2688966B1 patent drawingFigure 1
  • EP2688966B1 patent drawing
  • EP2688966B1 patent drawing

AI summary

A chemical-mechanical polishing ("CMP") composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1 ) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.