Chamber Liner Insulating Members for High RF Power PECVD
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Solution Overview
Problem
Conventional process chambers for plasma enhanced chemical vapor deposition (PECVD) limit RF power to about 4 kW, causing arcing when higher powers are used, which is necessary for depositing films with desirable properties.
Innovation Solution
The apparatus includes insulating members on brackets and the chamber body to reduce arcing, allowing for higher RF power usage up to 20 kW, with a support pedestal and showerhead configuration that confines plasma and increases pressure to minimize arcing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If RF power is increased above 4 kW to deposit films with desirable properties, then film quality improves, but arcing occurs in the plasma
Solution Approach 1:
The patent introduces an intermediary component - a ceramic insulating member positioned between the plasma and the chamber wall. This insulating member acts as a mediator that prevents direct interaction between the high-power plasma and the conductive chamber wall, thereby eliminating the arcing problem while allowing high RF power operation for improved film quality
Solution Approach 2:
The patent converts the potentially harmful arcing phenomenon into a beneficial configuration by positioning the insulating member to control plasma confinement. The same high RF power that causes arcing is now used beneficially to improve film properties, while the insulating member directs the plasma energy toward the substrate rather than allowing it to arc to the chamber wall
2Power
If conventional process chambers are used without insulating members, then device complexity remains low, but arcing limits RF power to about 4 kW
Solution Approach 1:
The patent segments the chamber structure by introducing a distinct insulating member component separate from the chamber wall. This segmentation allows the chamber to be divided into functional zones - the conductive chamber wall for structural support and the insulating member for plasma control - enabling high RF power operation without requiring complete redesign of the entire chamber structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the deposition of films with improved properties such as increased breakdown voltage, density, and reduced leakage current, while preventing damage from arcing and confining plasma within the process volume.
Implementation Method 1
A first plurality of insulating members is disposed on a plurality of brackets and extends laterally inward from the chamber body. A second plurality of insulating members is disposed on the chamber body and extends from the first plurality of insulating members to a support surface of the chamber body. The insulating members reduce the occurrence of arcing between the plasma and the chamber body.
Implementation Method 2
Conventional process chambers for plasma enhanced chemical vapor deposition (PECVD) processing lack suitable apparatus for utilizing high radio frequency (RF) power
Data Source
AI summary
Embodiments described herein generally relate to apparatus and methods for processing a substrate utilizing a high radio frequency (RF) power. The high RF power enables deposition of films on the substrate with more desirable properties. A first plurality of insulating members is disposed on a plurality of brackets and extends laterally inward from a chamber body. A second plurality of insulating members is disposed on the chamber body and extends from the first plurality of insulating members to a support surface of the chamber body. The insulating members reduce the occurrence of arcing between the plasma and the chamber body.