Electric Discharge Tubes TRIZ Cases

Fluorine plasma effluents isotropically etch silicon nitride with high selectivity, preventing trench deformation and cell crosstalk in 3D NAND structures.

A particle beam system segments incident charged particles into parallel partial beams using a multi-aperture plate for spatial separation.

An ion implanter uses a universal collimator and controller to adjust trajectories, enabling ribbon and spot beam modes without separate machines.

In-system heat treatment decomposes ammonium fluorosilicate deposits without atmospheric exposure, preventing side etching and foreign substance formation.

A solid-state electrochromic device uses a graded interfacial region to conduct ions while blocking electronic current between electrode layers.

A vacuum screen assembly blocks particles from entering semiconductor processing chambers while maintaining gas flow.

A hollow handling tool inserts a C-shaped resilient fixing ring to secure an object grid within a specimen holder.

A plasma processing stage uses segmented first and second heaters to control substrate temperature distribution.

Insulating boss mitigates strong electric field to reduce abnormal heat generation during high-frequency power supply.

Conductive tracks between resistive layers generate sparks to vaporize impurities, eliminating breakdown risks and reducing clean room assembly costs.

Pre-activated electron beam deposition accelerates protective strip creation to prevent ion beam damage during TEM lamella preparation.

An anhydrous vapor process selectively removes silicon nitride over oxide, eliminating ion bombardment damage from plasma.

A thermally conductive optical window transfers heat from light emitting materials to a cooling plate while transmitting excitation and emitted light.

A folded connection portion increases spacing between high-speed and low-speed terminals to minimize capacitive coupling.

Segmented gas distribution tubes with multiple discharge holes enable uniform plasma generation across large substrates.

Synchronous pulse plasma etching equipment modulates radio frequency power to control ion energy distribution.

Nitric acid oxidation creates a dense alumina film that reduces surface roughness and accelerates plasma process stabilization.

Azimuthal RF current sensors detect return currents in plasma processing chambers to monitor non-uniformity patterns.

Ceramic insulating members prevent arcing between plasma and chamber walls, enabling 20 kW RF power for improved film density.

A plasma processing apparatus uses a resistive element to stabilize impedance matching for independent high frequency power control.

A plasma generating apparatus uses toroidal ferrite cores to maximize inductive coupling between high and low frequency antennas.

Segmented doped fibers and selective coatings boost spatial resolution while blocking untargeted particles.

Multiple rectangular waveguides introduce mu-waves with specific phase differences to resolve eigen mode nonuniformity in high-density plasma.

External optical devices deflect light beams through a chamber window to measure internal target positions without breaking vacuum integrity.

Calculating measured parallel resistance against ideal values isolates faulty gas heater channel components without increasing measurement system complexity.

A radical etching apparatus generates HF radicals to remove thick oxide layers via microwave plasma decomposition.

Conductive stress attenuating units absorb thermal expansion in power transmitting rods, reducing maintenance costs from deformation.

Dynamic upper and lower limits adapt to 1-ms intervals, resolving missed small anomalies caused by fixed ranges and dead times during wafer processing.

A Fourier image resonator configuration corrects spherical and chromatic aberrations in multipass electron microscopy.

Radial flow through concentric packed beds reduces pressure drop while maximizing radical-catalyst interaction for efficient exhaust treatment.

Multi-level RF power waveforms ionize distinct gas species during separate pulse durations to control plasma composition.

Dual ion beam trenching removes coarse material with a high current density beam then cleans the surface artifact-free to enable accurate failure analysis.

Localized substrate heating vaporizes etch layers to improve productivity while preventing thermal damage.

A portable dock and power adapter system uses a connecting member to orient components for engagement.

A high-frequency power supply system uses phase reset signals to synchronize modulation timing between independent power sources.

Dynamic tuning of variable capacitors and inductors minimizes RF pulse reflection caused by impedance mismatches between the source and plasma.

An aperture set with a high resistance film on the shield plate prevents beam path curvature and positional deviations caused by electric field interference.

Elastic protrusion engages recess to seal electrode contact points against water ingress in wearable devices.

Pulsed DC voltage and high-frequency pedestal bias promote alpha-phase growth, preventing beta-tantalum formation in high aspect ratio vias.

Electrostatic lenses converge secondary electrons onto a deflection point, resolving trajectory control issues that reduce detection efficiency.

Multiple nozzles in the injection module displace central stagnation gas, resolving film thickness non-uniformity at high spin rates.

Heating the stage before voltage application prevents holding sheet wrinkling and abnormal discharge during substrate processing.

NF3 plasma cleaning at below 30 mT removes SiOx deposits from gas nozzle holes, preventing coating shedding that causes particulate defects on workpieces.

Tangential gas inlets create rotational flow to stabilize plasma, resolving efficiency losses from unstable reactor geometry.

A polarised electrostatic substrate holder incorporates an internal heating resistor to warm the component independently of plasma parameters.

Asymmetric RF power deposition reduces in-plane distortion in 3D NAND layer stacks.

A yttrium-containing cover ring reduces by-product contamination in plasma processing chambers, extending cleaning intervals from 300 to 1000 RF hours.

Axial locking hooks on the plug engage the receptacle cylindrical part to resolve insufficient locking strength against external forces.

Independent current line groups at different radii excite separate multipole fields, increasing field intensity and widening the correction range.

Raised features on a chamber part enable accurate wear tracking for reliable life estimation, reducing unexpected downtime.