Plasma Processing Electrode Insulation Mitigates Heat
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Solution Overview
Problem
In plasma processing apparatuses, high voltage and current flow during DC and high-frequency power supply to the electrostatic chuck electrode result in excessive heat generation, leading to temperature distribution variations and impaired processing yield.
Innovation Solution
A plasma processing apparatus with a sample stage featuring a dielectric film on its surface, a sintered plate bonded with an adhesive, and a film-like electrode supplied with high-frequency power, where a conductor section and insulating boss mitigate the strong electric field, reducing heat generation and hotspot formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high voltage and current are supplied to the electrostatic chuck electrode for DC and high-frequency power, then the electrostatic chucking force and plasma generation are improved, but excessive heat generation occurs leading to temperature distribution variations
Solution Approach 1:
The electrode is divided into multiple independent electrode sections (first electrode section, second electrode section, third electrode section) that can be independently controlled. This segmentation allows different power levels to be applied to different regions, preventing excessive heat generation in any single area while maintaining overall electrostatic chucking force and plasma generation effectiveness.
2Power
If high-frequency power is supplied to the film-like electrode, then plasma generation is enhanced, but abnormal heat generation and hotspot formation occur
Solution Approach 1:
Different electrode sections are assigned different power supply characteristics - the first electrode section receives high-frequency power for plasma generation, while the second and third electrode sections receive DC power or reduced high-frequency power. This local differentiation of power quality ensures plasma generation is enhanced where needed while preventing abnormal heat generation and hotspot formation in other regions.
3Speed
If the distance between the sample stage top surface and temperature adjustment unit is shortened, then temperature adjustment speed is improved, but the structural complexity increases
Solution Approach 1:
The temperature adjustment unit is integrated directly into the sample stage structure, merging the functions of sample holding and temperature control into a single unified component. This eliminates the need for separate temperature adjustment mechanisms and reduces the number of parts, thereby achieving fast temperature adjustment without significantly increasing structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration minimizes abnormal heat generation, prevents device failures due to temperature issues, and maintains a stable electric field distribution, enhancing processing accuracy and yield.
Implementation Method 1
a dielectric film disposed on a top surface of a substrate and formed by thermal spraying, and a sintered plate which is bonded with the dielectric film interposing an adhesive at an upper side of the dielectric film and has a film-like electrode therein to which high-frequency power is supplied
Implementation Method 2
a sintered plate which is bonded with the dielectric film interposing an adhesive at an upper side of the dielectric film
Implementation Method 3
a plasma generating device which supplies an electric field or a magnetic field for generating a plasma in the processing chamber
Implementation Method 4
a sample stage which chucks and holds a semiconductor wafer, as a member to be processed, mounted onto the sample stage, using static electricity
Data Source
AI summary
In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket.