Gas Injection Module Nozzle Design for Thin Film Uniformity
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Solution Overview
Problem
In semiconductor processing, the deposition or modification of thin film materials on substrates faces challenges due to low precursor gas flux at the center of the substrate, leading to film thickness non-uniformity, especially at high process volume pressures and rapid substrate rotation.
Innovation Solution
A gas injection module with a design that increases the relative gas flow rate and improves gas flow directionality, featuring a configuration with multiple nozzles and adjustable gas inlets to match or exceed the substrate's rotational spin rate, thereby enhancing gas flux and uniformity across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrate rotation speed is increased to improve film deposition uniformity, then edge region deposition is improved, but center region gas flux decreases further
Solution Approach 1:
The injection module employs different nozzle configurations in different regions of the showerhead. The center region has nozzles with larger spacing and potentially different orientations compared to the edge region, allowing tailored gas flow characteristics for each zone. This local differentiation enables the center region to receive adequate gas flux even at high substrate rotation speeds while maintaining the improved edge region deposition.
2Stability of the object's composition
If process chamber pressure is increased to improve gas flow stability, then gas flow control is improved, but precursor gas flux to substrate decreases
Solution Approach 1:
The injection module is designed to operate effectively across a range of pressure conditions. By optimizing nozzle geometry, spacing, and gas inlet parameters, the system maintains adequate precursor gas flux even at elevated pressures where gas flow stability is prioritized. The module's design allows it to compensate for the reduced flux that naturally occurs at higher pressures.
3Quantity of substance
If gas flow rate is increased to improve center region flux, then center region deposition is improved, but rotational velocity dominance increases
Solution Approach 1:
The injection module creates a localized gas flow enhancement specifically at the substrate center region through strategically positioned nozzles with appropriate spacing and orientation. This localized approach increases center region flux without requiring a proportional increase in overall gas flow rate, thereby avoiding the scenario where rotational velocity effects become excessively dominant across the entire substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively displaces gas from the stagnation region at the substrate's center, improving center-to-edge reaction uniformity and enabling greater control over gas flow distribution and directionality, resulting in more uniform thin film deposition.
Implementation Method 1
an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body
Implementation Method 2
a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate
Data Source
AI summary
The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about 1/3 and 3.