Process Chamber Oxide Treatment to Prevent TiN Film Peeling
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Solution Overview
Problem
In semiconductor device manufacturing, the formation of tungsten and titanium nitride films through nucleating type film-forming often results in abnormal crystal grain growth, leading to film peeling on the inner walls of process chambers and dummy substrates, which generates particles and affects manufacturing efficiency.
Innovation Solution
A method involving loading a substrate with an oxide film into a process chamber, supplying gases containing a group 14 element and hydrogen, and oxygen, to form a metal-containing film, which includes alternately repeating the supply of titanium tetrachloride and ammonia gases to form a titanium nitride film, while performing a treatment step to convert the film surface into titanium silicon nitride or oxidize it to prevent abnormal growth and peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If nucleating type film-forming is used to form TiN film and W film, then adhesion between films is improved, but abnormal crystal grain growth occurs leading to film peeling and particle generation
Solution Approach 1:
The patent applies preliminary action by forming an oxide film on the inner wall of the process chamber before depositing the TiN film. This oxide film serves as a preparatory layer that prevents abnormal crystal grain growth of the TiN film during subsequent deposition cycles, thereby preventing film peeling while maintaining adhesion to the insulating film on the substrate.
Solution Approach 2:
The patent applies local quality by creating a differentiated surface treatment: the oxide film is formed specifically on the inner wall of the process chamber where abnormal growth occurs, while the substrate surface receives the TiN film deposition. This localized oxide layer modifies the growth characteristics of TiN film only in the chamber wall area, preventing peeling without affecting the functional adhesion on the substrate.
2Strength
If TiN film is formed on process chamber inner wall, then adhesion between W film and insulating film is improved, but film accumulates and peels off due to abnormal growth into large crystal grains
Solution Approach 1:
The patent converts the harmful effect of TiN film formation on the chamber wall into a beneficial outcome. By intentionally allowing TiN film to form on the chamber wall and then treating it with oxygen to create an oxide layer, the process transforms potential污染源 (pollution source) into a protective layer that prevents future abnormal growth and particle generation.
Solution Approach 2:
The patent uses oxygen as a strong oxidant to convert the TiN film on the chamber wall into an oxide layer. This oxidation process fundamentally changes the surface properties of the chamber wall, creating a barrier that prevents abnormal crystal grain growth of subsequent TiN films and eliminates the source of particle generation.
3Productivity
If film is formed on dummy substrate and process chamber wall, then manufacturing process is completed, but accumulative thickness causes peeling and reduces manufacturing efficiency
Solution Approach 1:
The patent enables continuous operation by eliminating the need to stop production for chamber cleaning. The oxide film formation and oxygen treatment create a durable protective layer on the chamber wall that prevents film peeling over multiple deposition cycles, allowing uninterrupted manufacturing operations and maintaining high productivity.
Solution Approach 2:
The patent applies beforehand cushioning by proactively forming and oxidizing the oxide film on the chamber wall before problematic film peeling occurs. This preventive measure cushions against future particle generation and equipment degradation, ensuring stable long-term operation without downtime for maintenance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses film peeling and particle generation, improving manufacturing throughput by controlling the film growth and preventing the titanium nitride film from adhering as foreign substances, thereby enhancing the semiconductor device manufacturing process.
Implementation Method 1
forming the metal-containing film on the substrate after (b)
Implementation Method 2
performing a treatment step to convert the film surface into titanium silicon nitride or oxidize it to prevent abnormal growth and peeling
Data Source
AI summary
Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).