Channel Isolation Structure for Dense Semiconductor Gate Stability
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Solution Overview
Problem
As semiconductor devices shrink in pitch, there is a need to improve element performance and integration density while maintaining electrical stability and reducing capacitance.
Innovation Solution
The semiconductor device incorporates a specific structure with a lower pattern, channel isolation structure, field insulating layer, gate structure, channel pattern, and source/drain pattern, where the channel isolation structure has varying widths in different regions to enhance performance and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the pitch of the semiconductor device is decreased to increase integration density, then the degree of integration is improved, but electrical stability deteriorates and capacitance increases
Solution Approach 1:
The channel isolation structure is designed with different widths at different locations: a first width at the gate region and a second width at the source/drain region. This local variation allows the structure to provide different functions at different positions - better electrical isolation at the gate and reduced capacitance at the source/drain, thereby maintaining electrical stability while achieving high integration density
Solution Approach 2:
The invention transitions from a conventional planar isolation structure to a three-dimensional channel isolation structure that extends vertically and has varying cross-sectional dimensions. This dimensional change enables the isolation structure to effectively manage electrical properties in high-density configurations without compromising stability
2Productivity
If the pitch of the semiconductor device is decreased to increase integration density, then the degree of integration is improved, but capacitance increases
Solution Approach 1:
The channel isolation structure has a narrower second width at the source/drain region compared to the first width at the gate region. This local dimension optimization reduces the overlap area between the channel isolation structure and the source/drain electrode, thereby reducing parasitic capacitance and energy loss while maintaining high integration density
3Ease of manufacture
If a conventional channel isolation structure is used, then manufacturing is simpler, but short channel effects are not effectively suppressed
Solution Approach 1:
The channel isolation structure is designed with a first width at the gate region that is optimized for suppressing short channel effects, and a second width at the source/drain region that is optimized for reducing capacitance. This local differentiation allows effective SCE suppression at the gate while maintaining manufacturing feasibility through a systematic fabrication process
Data Source
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AI summary
A semiconductor device includes a lower pattern. A channel isolation structure (CCW1) and a field insulating layer contact the lower pattern. A gate structure is on the lower pattern, in contact with the channel isolation structure. A channel pattern is on the lower pattern, and includes sheet patterns, each being in contact with the channel isolation structure. A source/drain pattern (150, 250) contacts the channel pattern and the channel isolation structure. The channel isolation structure includes a first region contacting the gate structure and a second region (CCW1_R2) contacting the source/drain pattern. The second region of the channel isolation structure includes portions (CCW1_R21, CCW1_R22) whose widths increase as a distance from a bottom surface of the field insulating layer increases. A width of an uppermost portion (CCW1_R22) of the channel isolation structure is greater than a width of a lowermost portion (CCW1_R21) of the channel isolation structure.