Semiconductor Channel-Via Layout for Dense Routing Across Fluid Channels

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Solution Overview

Problem

Existing semiconductor devices face limitations in the number, density, and scalability of vias due to the presence of channels, cavities, or voids, which restrict the routing of electrical signals and the integration of fluid-filled heatsinks.

Innovation Solution

The semiconductor device incorporates a first substrate with vias extending to a ridge of a channel and lines extending along the ridge to connect with other connectors on a second substrate, allowing for increased via density and electrical pathways without overlapping ridges, while preventing fluid interference using zero-clearance bonding surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If channels, cavities, or voids are formed in the semiconductor device, then fluid management and heat dissipation are improved, but the number and density of vias are limited

Engineering Contradiction:
Improveheat dissipationVSAvoidvia density
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The invention segments the via structure into two parts: (1) vias extending only to the ridge of the channel rather than through the entire substrate, and (2) conductive lines extending along the ridge surface to connect to other substrates. This segmentation allows increased via density while preventing fluid interference with the conductive elements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The ridge structure acts as an intermediary element that separates the fluid-filled channel from the conductive vias and lines. By positioning vias to terminate at the ridge and using the ridge as a connection point for conductive lines, the invention prevents direct fluid contact with conductive elements while maintaining electrical connectivity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Quantity of substance

If vias are extended through the substrate to increase connectivity, then electrical pathways are improved, but fluid interference with conductive elements occurs

Engineering Contradiction:
Improveelectrical pathwaysVSAvoidfluid interference
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The via structure is segmented to extend only to the channel ridge rather than through the entire substrate. This partial extension maintains electrical connectivity needs while creating a physical barrier (the ridge) that prevents fluid from contacting the conductive via elements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from purely vertical via structures to a combination of vertical vias terminating at the ridge and horizontal conductive lines extending along the ridge surface. This dimensional change allows electrical pathways to route around fluid-filled channels without direct penetration into fluid zones.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250191999A1Structures and methods to provide connections across channels
Publication Date: 2025.06.12 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LTD
  • US20250191999A1 patent drawing
  • US20250191999A1 patent drawing
  • US20250191999A1 patent drawing

AI summary

Novel tools and techniques are provided for implementing a semiconductor package or a chip package, and more particularly methods, systems, and apparatuses are provided for implementing a semiconductor package or a chip package including a one or more channel vias. In various embodiments, an apparatus includes a first layer comprising a channel and a first via extending through the first layer to a first surface of a first ridge of the first channel. The apparatus can further include a second layer coupled to the first layer. The second layer can be a first outer layer of the first substrate. The apparatus can also include a first line coupled to the first via and extending along the first ridge of the first channel and embedded in the second layer.