Multi-Branch Charge Pump Voltage Drop Reduction
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Solution Overview
Problem
Existing charge pump designs require expensive high voltage NMOS transistors, which are inefficient due to high voltage loss and additional circuitry, making them costly and space-intensive, and are not suitable for using common bipolar transistors.
Innovation Solution
A multi-stage charge pump circuit with a control unit that sets the second control signal high only when the first control signal is high, reducing voltage drop across semiconductor switches and allowing the use of common bipolar transistors by arranging charge pump stages in series and using a current-source-capacitor oscillator with phase-shifted clock signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stress or pressure
If HVNMOS transistors are used as charge pump valves, then high voltage capability is achieved, but voltage loss and circuit complexity increase significantly
Solution Approach 1:
The charge pump is divided into multiple stages, each handling a portion of the total voltage multiplication. This segmentation allows each transistor to operate at lower voltage stress while achieving the same overall voltage gain, thereby reducing individual transistor voltage loss and improving efficiency
Solution Approach 2:
The invention changes the operating parameters of the charge pump by using multi-stage architecture with controlled clock signal phases. This transforms the single-stage high-voltage operation into multi-stage lower-voltage operation, reducing the voltage loss parameter while maintaining the required output voltage capability
2Stress or pressure
If HVNMOS transistors are used as charge pump valves, then high voltage capability is achieved, but additional biasing circuitry and chip area are required
Solution Approach 1:
The charge pump circuit is segmented into multiple identical stages, each requiring minimal biasing circuitry. This modular segmentation reduces overall circuit complexity compared to a single high-voltage stage, as each stage can be independently designed with standardized low-complexity biasing networks
Solution Approach 2:
The invention changes the voltage operating parameters across stages, allowing the use of standard bipolar transistors instead of specialized high-voltage devices. This parameter transformation simplifies the circuit design and reduces the complexity of biasing requirements while maintaining high voltage capability
3Stress or pressure
If HVNMOS transistors are used as charge pump valves, then high voltage capability is achieved, but gate-source voltage loss increases
Solution Approach 1:
The total gate-source voltage loss is segmented across multiple stages, with each stage contributing a portion of the overall voltage multiplication. This segmentation reduces the gate-source voltage swing required in each individual transistor, thereby reducing energy loss in the gate drive circuitry
Solution Approach 2:
The invention transforms the gate-source voltage parameter from a single large swing in high-voltage transistors to multiple smaller swings across stages. This parameter change reduces the energy loss associated with charging and discharging gate capacitances, improving overall efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces voltage drop across charge pump valves, enables the use of standard bipolar transistors, decreases chip area requirements, and increases efficiency by minimizing high voltage MOS voltage losses, allowing for a more cost-effective and compact charge pump design.
Implementation Method 1
A clock signal 103 is fed via a capacitor 105 to the gate of the HVNMOS transistor 101. A clock signal 104 is fed via a capacitor 106 to the gate of the HVNMOS transistor 102.
Data Source
AI summary
One example refers to a circuitry comprising a first charge pump stage controlled by a first control signal, a second charge pump stage controlled by a second control signal, wherein the first charge pump stage and the second charge pump stage are arranged subsequently to each other and comprising a control unit for providing the first control signal and the second control signal, wherein the control unit is arranged to set the second control signal to high when the first control signal is high. Also, a multi-branch charge pump, a method for controlling various charge pumps and a system for controlling various charge pumps are suggested.