Charge Pump Level Shifting to Cut Capacitor Breakdown Requirements
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently boosting voltage while minimizing increases in manufacturing costs and chip size, particularly due to the need for high-breakdown voltage capacitors when using clock signals with ground voltage levels.
Innovation Solution
A semiconductor device configuration utilizing a level shifter and capacitors to generate clock signals with specific voltage levels, coupled with switch elements and resistors to manage current flow, thereby suppressing the need for high-breakdown voltage capacitors, thus reducing costs and size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a charge pump uses clock signals with ground voltage levels, then voltage boosting function is achieved, but high-breakdown voltage capacitors are required increasing manufacturing costs and chip size
Solution Approach 1:
The patent changes the voltage level parameter of the clock signal from ground level (0V) to a raised level (e.g., 1.8V or higher). By elevating the reference voltage level of the clock signal, the voltage swing required across capacitors is reduced, allowing the use of standard breakdown voltage capacitors instead of high-breakdown voltage types, thereby reducing chip area and manufacturing cost while maintaining the voltage boosting function
2Reliability
If high-breakdown voltage capacitors are used in the charge pump, then voltage boosting reliability is improved, but manufacturing costs and chip size increase
Solution Approach 1:
The patent modifies the voltage parameter of the clock signal to operate at an elevated reference level rather than ground level. This parameter change reduces the voltage stress requirements for capacitors, enabling the use of standard, cost-effective capacitor technologies that are easier to manufacture with higher yields, while the voltage boosting reliability is maintained through proper level shifting design
3Reliability
If high-breakdown voltage capacitors are used in the charge pump, then voltage boosting reliability is improved, but chip size increases
Solution Approach 1:
By changing the operating voltage parameter of the clock signal to an elevated reference level, the patent reduces the breakdown voltage requirement for capacitors. This allows the use of smaller, standard-voltage capacitors that provide sufficient reliability for voltage boosting applications without the excessive area overhead of high-breakdown voltage capacitor designs
Data Source
AI summary
According to one embodiment, a semiconductor device includes: a first switch element having a first end, and a second end and a gate which are mutually coupled in common; a second switch element having a first end, a gate coupled to the gate of the first switch element; a level shifter having input ends to which a first voltage, a voltage of the first end of the second switch element, and a first signal are input, a first output end, and a second output end; a third switch element having a first end coupled to a first node, and a gate controlled by a signal output to the second output end; and a fourth switch element having a first end controlled by a signal output to the first node, a gate coupled to the second output end, and a second end to which the first voltage is input.