Charge Pump Device Using Segmented Transistors for Speed and Range
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Solution Overview
Problem
Charge pump devices face a trade-off between output voltage range and operating speed, where a higher output range results in slower speed, making them unsuitable for high-speed applications, and faster speed limits the output range, failing to meet the requirements of voltage-controlled oscillator circuits.
Innovation Solution
The charge pump device incorporates current source circuits with high-withstand voltage transistors for wide output range and core transistors for high-speed operation, with switches implemented using transistors that can handle low voltage levels, allowing for both high output range and fast operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the charge pump device uses transistors with higher withstand voltage to expand output range, then the output voltage range is improved, but the operating speed deteriorates
Solution Approach 1:
The charge pump device is divided into two distinct parts: current source circuits using first-type transistors (IGBTs) for wide voltage range, and switching circuits using second-type transistors (MOSFETs) for high-speed operation. This segmentation allows each part to be optimized independently for its specific function, resolving the contradiction between voltage range and speed.
Solution Approach 2:
Different transistor types are assigned to different functional regions: the current source circuits use IGBTs with high withstand voltage characteristics to provide wide output range, while the switching circuits use MOSFETs with low gate charge characteristics to provide fast switching speed. Each region has locally optimized properties suitable for its specific requirement.
2Speed
If the charge pump device uses transistors with faster switching speed, then the operating speed is improved, but the output range deteriorates
Solution Approach 1:
The device segments functions between two transistor types: MOSFETs handle the switching function requiring fast speed, while IGBTs handle the current source function requiring wide voltage range. This functional segmentation eliminates the need to compromise either speed or range.
Solution Approach 2:
The control circuit acts as an intermediary that coordinates the operation of MOSFET switches and IGBT current sources. It generates appropriate control signals to turn on MOSFETs for fast switching while simultaneously controlling IGBTs to provide the required current range, thereby mediating between the conflicting requirements of speed and output range.
Data Source
AI summary
A charge pump device includes first to third current source circuits, a first switch, and a second switch. The first current source circuit is implemented with a first type transistor, and provides a first current to an output node. The first switch is selectively turned on according to a first control signal. When the first switch is turned on, the second current source circuit drains a second current from the output node. The second switch is selectively turned on according to a second control signal. Each of the first switch and the second switch is implemented with a second type transistor, and a withstand voltage of the first type transistor is higher than a withstand voltage of the second type transistor. When the second switch is turned on, the third current source circuit drains a third current from the output node.