Charge Pump Circuit Staging for Peak Current and Setup Time
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Solution Overview
Problem
Nonvolatile memory devices face challenges in maintaining performance while managing peak current to prevent malfunction and reducing word-line setup time, which affects the efficiency of charge pump circuits.
Innovation Solution
A memory device with a voltage generator that includes a charge pump controller to manage multiple charge pumps through independent enable signals and switch configurations, allowing for flexible operation modes to optimize the number of stages and timing of charge pump operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the magnitude of word-line charging current is maintained to maintain performance, then performance is improved, but peak current increases causing malfunction
Solution Approach 1:
The charge pump circuit is divided into multiple stages (first charge pump circuit, second charge pump circuit, third charge pump circuit) that operate sequentially rather than simultaneously. Each stage pumps voltage to the next, allowing the total voltage boost to be achieved in steps, which distributes the current demand over time and prevents peak current malfunction while maintaining performance.
Solution Approach 2:
The charge pump controller enables charge pump circuits in advance based on predicted voltage requirements. By looking ahead at upcoming operations and enabling the necessary charge pump stages before they are needed, the system prepares voltage in advance, smoothing current demand and avoiding sudden peaks that would cause malfunction.
2Reliability
If the magnitude of word-line charging current is reduced to prevent peak current, then peak current is prevented, but word-line setup time increases and performance deteriorates
Solution Approach 1:
The charge pump system dynamically adjusts which stages are active based on real-time voltage requirements. The charge pump controller selectively enables or disables specific charge pump circuits depending on the current voltage level and upcoming demands, optimizing the balance between current magnitude and charging speed to prevent peak current while maintaining performance.
Solution Approach 2:
The charge pump circuits operate in periodic cycles, with each stage being enabled and disabled in sequence. This periodic operation allows the system to deliver high current in controlled pulses rather than continuous peak current, reducing stress on the system while still achieving the necessary voltage levels for timely word-line setup.
3Power
If multiple charge pump circuits are used to generate high voltage, then voltage generation capability is improved, but device complexity increases
Solution Approach 1:
The charge pump circuits are designed with shared components and control logic. Multiple charge pump circuits use the same basic circuit topology and are controlled by a single charge pump controller that manages all stages uniformly. This multi-functionality approach allows high voltage generation capability while reducing overall complexity through component sharing and standardized control.
Solution Approach 2:
The charge pump circuits are arranged in a nested configuration where the output of one charge pump stage feeds into the input of the next stage. This cascading nested structure allows voltage to be built up incrementally through each stage, achieving high voltage generation capability while organizing the complexity in a systematic, manageable hierarchy rather than a scattered configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces peak current and minimizes word-line setup time, enhancing the performance and efficiency of the memory device by optimizing the charge pump circuit operations.
Implementation Method 1
The charge pump circuit may use a capacitor as an energy storage element
Data Source
AI summary
A memory device may include a memory cell array including a plurality of memory cells, and a voltage generator configured to generate an output voltage and provide the output voltage to the memory cell array. The voltage generator may include a charge pump controller configured to generate a plurality of enable signals based on a clock signal, a first charge pump circuit configured to pump a first voltage and output a first pumping voltage, a second charge pump circuit configured to pump the first pumping voltage or the first voltage and output a second pumping voltage as the output voltage, and first and second switches connected between the first charge pump circuit and the second charge pump circuit. The charge pump controller is configured to respectively enable the first and second charge pump circuits in response to the plurality of enable signals.