Charge Trap Flash Programming via Electron Tunneling
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Solution Overview
Problem
Existing methods for programming charge trap flash memory suffer from low efficiency, significant damage to the Tunnel Oxide layer, and small read/write currents, which limits their reliability and endurance.
Innovation Solution
A method involving the generation of tertiary electrons through a transverse and vertical electric field, where primary electrons collide with the drain to create electron holes, which then collide with the substrate to generate secondary electrons, and these secondary electrons are further injected into the insulating storage medium under a vertical electric field, enhancing programming efficiency and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If Channel Hot Electron (CHE) injection is used for programming, then programming efficiency can be improved by applying higher voltage, but power consumption increases and damage to the Tunnel Oxide layer worsens
Solution Approach 1:
The patent changes the fundamental programming mechanism from hot electron injection to direct electron tunneling by applying specific voltage parameters (Vgs=5V, Vds=-5V). This parameter change enables electrons to tunnel directly into the insulating storage medium without requiring high voltage hot carrier generation, thus improving programming efficiency while reducing power consumption and avoiding Tunnel Oxide layer damage
Solution Approach 2:
The patent replaces the mechanical hot electron injection process (which requires high voltage acceleration and causes physical damage) with a quantum tunneling mechanism. Electrons are injected directly through the Tunnel Oxide layer via quantum mechanical tunneling under controlled electric fields, eliminating the need for high voltage hot carrier generation and thereby reducing both power consumption and physical damage to the oxide layer
2Productivity
If Channel Hot Electron (CHE) injection is used for programming, then programming efficiency can be improved, but damage to the Tunnel Oxide layer increases
Solution Approach 1:
The patent replaces the mechanical hot electron injection process (which requires high voltage acceleration and causes physical damage) with a quantum tunneling mechanism. Electrons are injected directly through the Tunnel Oxide layer via quantum mechanical tunneling under controlled electric fields, eliminating the need for high voltage hot carrier generation and thereby reducing both power consumption and physical damage to the oxide layer
Solution Approach 2:
The patent introduces an intermediary tunneling process as a mediator between the control gate and the insulating storage medium. Instead of directly injecting hot electrons that cause damage, the patent uses controlled electric fields to mediate electron transport through quantum tunneling, achieving programming efficiency while protecting the Tunnel Oxide layer from degradation
3Object-affected harmful factors
If Fowler-Nordheim (FN) Tunneling is used for programming, then damage to the Tunnel Oxide layer is reduced, but programming current and read/write currents become small
Solution Approach 1:
The patent applies local quality by creating a highly concentrated electric field specifically at the drain region (Vds=-5V) to generate strong electron tunneling current locally. This localized field enhancement enables large programming currents to be achieved at the drain-side Tunnel Oxide layer without requiring high voltage across the entire device, thus maintaining low damage while achieving high current
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases read and write currents, reduces power consumption, and improves device reliability, while minimizing damage to the Tunnel Oxide layer, thus leveraging the low-cost advantage of charge trap flash memory.
Implementation Method 1
primary electrons collide with the drain to generate electron holes
Implementation Method 2
the electron holes are accelerated downward by the action of the electric field and collide with the substrate to generate secondary electrons
Implementation Method 3
the secondary electrons generate tertiary electrons under the action of the vertical electric field, and the tertiary electrons are injected into an insulating storage medium layer
Data Source
AI summary
The present disclosure provides a method for programming charge trap flash memory, including: enabling a channel of a charge trap storage component, to form a transverse electric field between a source and a drain, to generate primary electrons flowing from the source to the drain; colliding, by the primary electrons after a preset time, with the drain to generate electron holes; applying voltages to the drain and a substrate, where the electron holes are accelerated downward by the action of the electric field to collide with the substrate, to generate secondary electrons; and applying voltages to a gate and the substrate, to form a vertical electric field, wherein the secondary electrons generate tertiary electrons under the action of the vertical electric field and the tertiary electrons are injected into an insulating storage medium layer of the charge trap storage component, to complete a programming operation.